Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities
We compare the optical properties of four <i>pin</i> diode samples differing by built-in field direction and width of the In<sub>0.17</sub>Ga<sub>0.83</sub>N quantum well in the active layer: two diodes with standard <i>nip</i> layer sequences and 2.6...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/2/112 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!