Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities
We compare the optical properties of four <i>pin</i> diode samples differing by built-in field direction and width of the In<sub>0.17</sub>Ga<sub>0.83</sub>N quantum well in the active layer: two diodes with standard <i>nip</i> layer sequences and 2.6...
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MDPI AG
2025-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/2/112 |
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| author | Artem Bercha Mikołaj Chlipała Mateusz Hajdel Grzegorz Muzioł Marcin Siekacz Henryk Turski Witold Trzeciakowski |
| author_facet | Artem Bercha Mikołaj Chlipała Mateusz Hajdel Grzegorz Muzioł Marcin Siekacz Henryk Turski Witold Trzeciakowski |
| author_sort | Artem Bercha |
| collection | DOAJ |
| description | We compare the optical properties of four <i>pin</i> diode samples differing by built-in field direction and width of the In<sub>0.17</sub>Ga<sub>0.83</sub>N quantum well in the active layer: two diodes with standard <i>nip</i> layer sequences and 2.6 and 15 nm well widths and two diodes with inverted <i>pin</i> layer ordering (due to the tunnel junction grown before the <i>pin</i> structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected carriers. Out of the four types of diodes, the highest photocurrent efficiency was obtained (at reverse voltage) for the wide-well, inverted polarity diode. This diode also showed the highest PL intensity (at positive voltages) of our four samples. Diodes with wide wells have stable emission wavelengths (almost independent of bias and excitation power). |
| format | Article |
| id | doaj-art-a454d72a7d09456288a3ed403aab874a |
| institution | Kabale University |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-a454d72a7d09456288a3ed403aab874a2025-01-24T13:44:11ZengMDPI AGNanomaterials2079-49912025-01-0115211210.3390/nano15020112Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and PolaritiesArtem Bercha0Mikołaj Chlipała1Mateusz Hajdel2Grzegorz Muzioł3Marcin Siekacz4Henryk Turski5Witold Trzeciakowski6Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, PolandWe compare the optical properties of four <i>pin</i> diode samples differing by built-in field direction and width of the In<sub>0.17</sub>Ga<sub>0.83</sub>N quantum well in the active layer: two diodes with standard <i>nip</i> layer sequences and 2.6 and 15 nm well widths and two diodes with inverted <i>pin</i> layer ordering (due to the tunnel junction grown before the <i>pin</i> structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected carriers. Out of the four types of diodes, the highest photocurrent efficiency was obtained (at reverse voltage) for the wide-well, inverted polarity diode. This diode also showed the highest PL intensity (at positive voltages) of our four samples. Diodes with wide wells have stable emission wavelengths (almost independent of bias and excitation power).https://www.mdpi.com/2079-4991/15/2/112nitride LEDsquantum-confined Stark effectphotoluminescencephotocurrentscreening effectswide and narrow InGaN quantum wells |
| spellingShingle | Artem Bercha Mikołaj Chlipała Mateusz Hajdel Grzegorz Muzioł Marcin Siekacz Henryk Turski Witold Trzeciakowski Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities Nanomaterials nitride LEDs quantum-confined Stark effect photoluminescence photocurrent screening effects wide and narrow InGaN quantum wells |
| title | Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities |
| title_full | Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities |
| title_fullStr | Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities |
| title_full_unstemmed | Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities |
| title_short | Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities |
| title_sort | photoluminescence and photocurrent from ingan gan diodes with quantum wells of different widths and polarities |
| topic | nitride LEDs quantum-confined Stark effect photoluminescence photocurrent screening effects wide and narrow InGaN quantum wells |
| url | https://www.mdpi.com/2079-4991/15/2/112 |
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