Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities
We compare the optical properties of four <i>pin</i> diode samples differing by built-in field direction and width of the In<sub>0.17</sub>Ga<sub>0.83</sub>N quantum well in the active layer: two diodes with standard <i>nip</i> layer sequences and 2.6...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/2/112 |
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| Summary: | We compare the optical properties of four <i>pin</i> diode samples differing by built-in field direction and width of the In<sub>0.17</sub>Ga<sub>0.83</sub>N quantum well in the active layer: two diodes with standard <i>nip</i> layer sequences and 2.6 and 15 nm well widths and two diodes with inverted <i>pin</i> layer ordering (due to the tunnel junction grown before the <i>pin</i> structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected carriers. Out of the four types of diodes, the highest photocurrent efficiency was obtained (at reverse voltage) for the wide-well, inverted polarity diode. This diode also showed the highest PL intensity (at positive voltages) of our four samples. Diodes with wide wells have stable emission wavelengths (almost independent of bias and excitation power). |
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| ISSN: | 2079-4991 |