Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers
Technology scaling relies on reduced nodal capacitances and lower voltages in order to improve performance and power consumption, resulting in significant increase in layout density, thus making these submicron technologies more susceptible to soft errors. Previous analysis indicates a significant i...
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Wiley
2014-01-01
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| Series: | The Scientific World Journal |
| Online Access: | http://dx.doi.org/10.1155/2014/876435 |
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| author | Nor Muzlifah Mahyuddin Gordon Russell |
| author_facet | Nor Muzlifah Mahyuddin Gordon Russell |
| author_sort | Nor Muzlifah Mahyuddin |
| collection | DOAJ |
| description | Technology scaling relies on reduced nodal capacitances and lower voltages in order to improve performance and power consumption, resulting in significant increase in layout density, thus making these submicron technologies more susceptible to soft errors. Previous analysis indicates a significant improvement in SEU tolerance of the driver when the bias current is injected into the circuit but results in increase of power dissipation. Subsequently, other alternatives are considered. The impact of transistor sizes and temperature on SEU tolerance is tested. Results indicate no significant changes in Qcrit when the effective transistor length is increased by 10%, but there is an improvement when high temperature and high bias currents are applied. However, this is due to other process parameters that are temperature dependent, which contribute to the sharp increase in Qcrit. It is found that, with temperature, there is no clear factor that can justify the direct impact of temperature on the SEU tolerance. Thus, in order to improve the SEU tolerance, high bias currents are still considered to be the most effective method in improving the SEU sensitivity. However, good trade-off is required for the low-swing driver in order to meet the reliability target with minimal power overhead. |
| format | Article |
| id | doaj-art-a41576d797fc48ad82a117a1300c5f71 |
| institution | Kabale University |
| issn | 2356-6140 1537-744X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
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| series | The Scientific World Journal |
| spelling | doaj-art-a41576d797fc48ad82a117a1300c5f712025-02-03T06:06:23ZengWileyThe Scientific World Journal2356-61401537-744X2014-01-01201410.1155/2014/876435876435Single-Event-Upset Sensitivity Analysis on Low-Swing DriversNor Muzlifah Mahyuddin0Gordon Russell1School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang, MalaysiaSchool of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, UKTechnology scaling relies on reduced nodal capacitances and lower voltages in order to improve performance and power consumption, resulting in significant increase in layout density, thus making these submicron technologies more susceptible to soft errors. Previous analysis indicates a significant improvement in SEU tolerance of the driver when the bias current is injected into the circuit but results in increase of power dissipation. Subsequently, other alternatives are considered. The impact of transistor sizes and temperature on SEU tolerance is tested. Results indicate no significant changes in Qcrit when the effective transistor length is increased by 10%, but there is an improvement when high temperature and high bias currents are applied. However, this is due to other process parameters that are temperature dependent, which contribute to the sharp increase in Qcrit. It is found that, with temperature, there is no clear factor that can justify the direct impact of temperature on the SEU tolerance. Thus, in order to improve the SEU tolerance, high bias currents are still considered to be the most effective method in improving the SEU sensitivity. However, good trade-off is required for the low-swing driver in order to meet the reliability target with minimal power overhead.http://dx.doi.org/10.1155/2014/876435 |
| spellingShingle | Nor Muzlifah Mahyuddin Gordon Russell Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers The Scientific World Journal |
| title | Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers |
| title_full | Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers |
| title_fullStr | Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers |
| title_full_unstemmed | Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers |
| title_short | Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers |
| title_sort | single event upset sensitivity analysis on low swing drivers |
| url | http://dx.doi.org/10.1155/2014/876435 |
| work_keys_str_mv | AT normuzlifahmahyuddin singleeventupsetsensitivityanalysisonlowswingdrivers AT gordonrussell singleeventupsetsensitivityanalysisonlowswingdrivers |