SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network

SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network

The SiC MOSFET with an integrated SBD (SBD-MOSFET) exhibits excellent performance in power electronics. However, the static and dynamic characteristics of this device are influenced by a multitude of parameters, and traditional TCAD simulation methods are often characterized by their complexity. Due...

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Bibliographic Details
Main Authors: Xiping Niu, Ling Sang, Xiaoling Duan, Shijie Gu, Peng Zhao, Tao Zhu, Kaixuan Xu, Yawei He, Zheyang Li, Jincheng Zhang, Rui Jin
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Micromachines
Subjects:
SiC MOSFET
SBD
neural networks
Online Access:https://www.mdpi.com/2072-666X/16/1/55
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