Development of a Zero-Bias Detector Based on T-Type Structure
The detector plays a crucial role in terahertz (THz) receiving systems, converting weak high-frequency signals into low-frequency or direct current signals that are easier to process. This paper proposes a zero-bias Schottky diode THz detector based on a T-shaped structure. The design is based on th...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10854473/ |
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| _version_ | 1832575606388162560 |
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| author | Xiaobo Zhang Jin Meng Jingtao Zhou Baijun Zhang Zenghui Liu Zexing Yuan |
| author_facet | Xiaobo Zhang Jin Meng Jingtao Zhou Baijun Zhang Zenghui Liu Zexing Yuan |
| author_sort | Xiaobo Zhang |
| collection | DOAJ |
| description | The detector plays a crucial role in terahertz (THz) receiving systems, converting weak high-frequency signals into low-frequency or direct current signals that are easier to process. This paper proposes a zero-bias Schottky diode THz detector based on a T-shaped structure. The design is based on the InGaAs/InP material system and achieves efficient detection at 500 GHz. Experimental results show that the voltage responsivity of the detector reaches over 2000 V/W at 500 GHz, demonstrating excellent performance. This paper provides a detailed introduction to the design concept, working principle, and experimental results of the detector, which lays the device foundation for the development of terahertz focal plane imaging systems and provides support for future terahertz applications in higher frequency bands. |
| format | Article |
| id | doaj-art-a330e562c1684831a71e6a321b13df48 |
| institution | Kabale University |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj-art-a330e562c1684831a71e6a321b13df482025-01-31T23:05:03ZengIEEEIEEE Access2169-35362025-01-0113207922079810.1109/ACCESS.2025.353429210854473Development of a Zero-Bias Detector Based on T-Type StructureXiaobo Zhang0https://orcid.org/0009-0003-8441-5122Jin Meng1https://orcid.org/0009-0008-8918-7380Jingtao Zhou2https://orcid.org/0009-0002-6528-0034Baijun Zhang3Zenghui Liu4Zexing Yuan5Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, ChinaKey Laboratory of Microwave Remote Sensing, Chinese Academy of Sciences, Beijing, ChinaDepartment of Microwave Devices and Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, ChinaState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, ChinaKey Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, ChinaThe detector plays a crucial role in terahertz (THz) receiving systems, converting weak high-frequency signals into low-frequency or direct current signals that are easier to process. This paper proposes a zero-bias Schottky diode THz detector based on a T-shaped structure. The design is based on the InGaAs/InP material system and achieves efficient detection at 500 GHz. Experimental results show that the voltage responsivity of the detector reaches over 2000 V/W at 500 GHz, demonstrating excellent performance. This paper provides a detailed introduction to the design concept, working principle, and experimental results of the detector, which lays the device foundation for the development of terahertz focal plane imaging systems and provides support for future terahertz applications in higher frequency bands.https://ieeexplore.ieee.org/document/10854473/THz detectorzero-bias Schottky diodeT-shaped structureTHz applicationsTHz systemsvoltage responsivity |
| spellingShingle | Xiaobo Zhang Jin Meng Jingtao Zhou Baijun Zhang Zenghui Liu Zexing Yuan Development of a Zero-Bias Detector Based on T-Type Structure IEEE Access THz detector zero-bias Schottky diode T-shaped structure THz applications THz systems voltage responsivity |
| title | Development of a Zero-Bias Detector Based on T-Type Structure |
| title_full | Development of a Zero-Bias Detector Based on T-Type Structure |
| title_fullStr | Development of a Zero-Bias Detector Based on T-Type Structure |
| title_full_unstemmed | Development of a Zero-Bias Detector Based on T-Type Structure |
| title_short | Development of a Zero-Bias Detector Based on T-Type Structure |
| title_sort | development of a zero bias detector based on t type structure |
| topic | THz detector zero-bias Schottky diode T-shaped structure THz applications THz systems voltage responsivity |
| url | https://ieeexplore.ieee.org/document/10854473/ |
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