Efficient Silicon Light-Emitting-Diodes with a p-Si/Ultrathin SiO2/n-Si Structure
We report the efficient enhancement of light emission from silicon crystal by covering the silicon surface with an ultrathin (several nm) SiO2 layer. The photoluminescence of Si band edge emission (1.14 μm band) at room temperature is enhanced by two orders of magnitude. Compared with a p-Si/n-Si di...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2011-01-01
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| Series: | International Journal of Optics |
| Online Access: | http://dx.doi.org/10.1155/2011/364594 |
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