Tunneling Dielectric Thickness‐Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures
Abstract This work demonstrates the floating gate devices featuring a small molecule‐insulator‐small molecule‐insulator sandwiched structure, where the versatile electrical characteristics can be achieved depending on the thickness of the intermediate parylene tunneling dielectric layer (TDL). For t...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-04-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400910 |
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