Structural, Mechanical, and Tribological Properties of Molybdenum-Doped Diamond-like Carbon Films
Non-hydrogenated diamond-like carbon (DLC) films and molybdenum-doped diamond-like carbon (Mo-DLC) films were deposited by direct current magnetron sputtering. The formation was carried out on Si (100) wafers. The influence of molybdenum concentration and deposition temperature on the surface morpho...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/15/5/463 |
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| Summary: | Non-hydrogenated diamond-like carbon (DLC) films and molybdenum-doped diamond-like carbon (Mo-DLC) films were deposited by direct current magnetron sputtering. The formation was carried out on Si (100) wafers. The influence of molybdenum concentration and deposition temperature on the surface morphology, chemical composition, type of chemical bonds, friction force at nanoscale, and nanohardness of the DLC coatings were investigated by atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and nanoindenter, respectively. The concentration of molybdenum in the films varies from 1.2 at.% to 10.3 at.%. The increase in molybdenum content promotes the graphitization of DLC films, lowering the sp<sup>3</sup> site fraction and increasing the oxygen content, which contributes to the reduction in nanohardness (by 21%) of the DLC films. The decrease in the synthesis temperature from 235 °C to 180 °C enhanced the oxygen amount up to 20.4 at.%. The sp<sup>3</sup> site fraction and nanohardness of the Mo-DLC films were enhanced with the reduction in the deposition temperature. The film deposited at a substrate temperature of 235 °C exhibited the lowest friction coefficient (CoF) of 0.03, where its molybdenum concentration was 1.2 at.%. The decline in the synthesis temperature increased the CoF of the Mo-DLC films up to seven times. |
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| ISSN: | 2073-4352 |