Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates
AlGaN quantum wells (QWs) emitting at 265 nm were fabricated on face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) templates with n-AlGaN and different homoepitaxial AlN thicknesses (200–2000 nm) by metalorganic vapor phase epitaxy (MOVPE). Thicker MOVPE-AlN led to higher dislocation densities...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ade2b7 |
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| Summary: | AlGaN quantum wells (QWs) emitting at 265 nm were fabricated on face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) templates with n-AlGaN and different homoepitaxial AlN thicknesses (200–2000 nm) by metalorganic vapor phase epitaxy (MOVPE). Thicker MOVPE-AlN led to higher dislocation densities. The type and concentration of vacancies in n-AlGaN, as well as the photoluminescence efficiencies and time-resolved photoluminescence lifetimes of the QWs were nearly unchanged regardless of the MOVPE-AlN thickness, suggesting nearly identical internal quantum efficiencies. The results prove high-quality AlGaN QW growth with only 200 nm thick MOVPE-AlN, resulting in reduced total thickness of AlN by using FFA Sp-AlN. |
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| ISSN: | 1882-0786 |