Study on Growth Process of Ag(In, Ga)Se2 Films by a Three-Stage Co-Evaporation Method Using Molecular Beam Epitaxy Apparatus
Ag(In, Ga)Se<sub>2</sub> (AIGS) has been considered as a promising candidate material for the top cell of chalcopyrite-based tandem solar cells. In this work, the process of (AIGS) film growth by a three-stage molecular beam epitaxy method is studied. The diffusion of silver and grain gr...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7858727/ |
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