DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gat...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Dalat University
2020-09-01
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| Series: | Tạp chí Khoa học Đại học Đà Lạt |
| Subjects: | |
| Online Access: | http://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745 |
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