DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gat...
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Dalat University
2020-09-01
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| Series: | Tạp chí Khoa học Đại học Đà Lạt |
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| Online Access: | http://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745 |
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| author | Nguyễn Đăng Chiến Lưu Thế Vinh Huỳnh Thị Hồng Thắm Chun Hsing Shih |
| author_facet | Nguyễn Đăng Chiến Lưu Thế Vinh Huỳnh Thị Hồng Thắm Chun Hsing Shih |
| author_sort | Nguyễn Đăng Chiến |
| collection | DOAJ |
| description | Hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gate TFETs. Proper comparisons and analyses show that the roles and designs of source-side dielectric heterojunctions are similar, whereas those of drain-side dielectric heterojunctions are extremely different in single- and double-gate TFETs. For both device structures, the optimal position of a source-side dielectric heterojunction does not depend on the ratio of low/high-k equivalent oxide thicknesses (EOTs). When increasing the EOT ratio, the on-current enhancement by an optimized source-side dielectric heterojunction is first increased (EOT ratio < 12) and then saturated (EOT ratio > 12). The role of a drain-side dielectric heterojunction in enhancing on-current is limited in double-gate TFETs (every EOT ratio), but significant in single-gate devices (EOT ratio < 12). For EOT ratios < 12, the optimal position of a drain-side dielectric heterojunction in double-gate TFETs is around 2-3 nm farther from the source compared to that in single-gate TFETs. For EOT ratios > 12, the optimal position of a drain-side dielectric heterojunction in double-gate TFETs is not dependent on the EOT ratio, unlike single-gate TFETs. Those differences are due to the difference in the depths of local potential wells in the two TFET structures. |
| format | Article |
| id | doaj-art-9dae4ddea949492387a6d5f3717f6d5f |
| institution | Kabale University |
| issn | 0866-787X 0866-787X |
| language | English |
| publishDate | 2020-09-01 |
| publisher | Dalat University |
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| series | Tạp chí Khoa học Đại học Đà Lạt |
| spelling | doaj-art-9dae4ddea949492387a6d5f3717f6d5f2025-02-02T03:21:19ZengDalat UniversityTạp chí Khoa học Đại học Đà Lạt0866-787X0866-787X2020-09-0110311012310.37569/DalatUniversity.10.3.745(2020)338DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORSNguyễn Đăng Chiến0Lưu Thế Vinh1Huỳnh Thị Hồng Thắm2Chun Hsing Shih3Dalat UniversityThe Faculty of Electronic Technology, Industrial University of Ho Chi Minh CityHoang Hoa Tham Senior High School, KhanhhoaThe Department of Electrical Engineering, National Chi Nan University, Nantou, TaiwanHetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gate TFETs. Proper comparisons and analyses show that the roles and designs of source-side dielectric heterojunctions are similar, whereas those of drain-side dielectric heterojunctions are extremely different in single- and double-gate TFETs. For both device structures, the optimal position of a source-side dielectric heterojunction does not depend on the ratio of low/high-k equivalent oxide thicknesses (EOTs). When increasing the EOT ratio, the on-current enhancement by an optimized source-side dielectric heterojunction is first increased (EOT ratio < 12) and then saturated (EOT ratio > 12). The role of a drain-side dielectric heterojunction in enhancing on-current is limited in double-gate TFETs (every EOT ratio), but significant in single-gate devices (EOT ratio < 12). For EOT ratios < 12, the optimal position of a drain-side dielectric heterojunction in double-gate TFETs is around 2-3 nm farther from the source compared to that in single-gate TFETs. For EOT ratios > 12, the optimal position of a drain-side dielectric heterojunction in double-gate TFETs is not dependent on the EOT ratio, unlike single-gate TFETs. Those differences are due to the difference in the depths of local potential wells in the two TFET structures.http://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745band-to-band tunnelingdouble-gate transistorhetero-gate dielectrichigh-k gate-insulatortunnel fet. |
| spellingShingle | Nguyễn Đăng Chiến Lưu Thế Vinh Huỳnh Thị Hồng Thắm Chun Hsing Shih DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS Tạp chí Khoa học Đại học Đà Lạt band-to-band tunneling double-gate transistor hetero-gate dielectric high-k gate-insulator tunnel fet. |
| title | DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS |
| title_full | DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS |
| title_fullStr | DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS |
| title_full_unstemmed | DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS |
| title_short | DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS |
| title_sort | different roles and designs of hetero gate dielectric in single and double gate tunnel field effect transistors |
| topic | band-to-band tunneling double-gate transistor hetero-gate dielectric high-k gate-insulator tunnel fet. |
| url | http://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/745 |
| work_keys_str_mv | AT nguyenđangchien differentrolesanddesignsofheterogatedielectricinsingleanddoublegatetunnelfieldeffecttransistors AT luuthevinh differentrolesanddesignsofheterogatedielectricinsingleanddoublegatetunnelfieldeffecttransistors AT huynhthihongtham differentrolesanddesignsofheterogatedielectricinsingleanddoublegatetunnelfieldeffecttransistors AT chunhsingshih differentrolesanddesignsofheterogatedielectricinsingleanddoublegatetunnelfieldeffecttransistors |