1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate
A wafer-bonded vertical-cavity surface-emitting laser (VCSEL) was demonstrated by surface-activated bonding (SAB) of a GaAs-based distributed Bragg reflector (DBR) on a Ge substrate. Current injection lasing was achieved at the 1380 nm band under continuous-wave operation with AlGaInAs-based multi-q...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/adaa4c |
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| _version_ | 1832583422042701824 |
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| author | Tomomasa Watanabe Mikihiro Yokozeki Masashi Takanohashi Michinori Shiomi Hiroshi Nakajima Masayuki Tanaka Daiji Kasahara Noriko Kobayashi Noriyuki Futagawa |
| author_facet | Tomomasa Watanabe Mikihiro Yokozeki Masashi Takanohashi Michinori Shiomi Hiroshi Nakajima Masayuki Tanaka Daiji Kasahara Noriko Kobayashi Noriyuki Futagawa |
| author_sort | Tomomasa Watanabe |
| collection | DOAJ |
| description | A wafer-bonded vertical-cavity surface-emitting laser (VCSEL) was demonstrated by surface-activated bonding (SAB) of a GaAs-based distributed Bragg reflector (DBR) on a Ge substrate. Current injection lasing was achieved at the 1380 nm band under continuous-wave operation with AlGaInAs-based multi-quantum wells and a buried tunnel junction for current and optical confinement. The thermal conductivity of the VCSELs bonded by SAB was superior to that of InP VCSELs owing to high heat dissipation of GaAs DBR. This bonding method is suitable for short-wavelength infrared VCSELs and various other applications, including sensing, data communication, and silicon photonics. |
| format | Article |
| id | doaj-art-9d98c86b3c3c429c8d4db53d1568e06f |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-9d98c86b3c3c429c8d4db53d1568e06f2025-01-28T14:26:31ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101650710.35848/1882-0786/adaa4c1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrateTomomasa Watanabe0Mikihiro Yokozeki1Masashi Takanohashi2Michinori Shiomi3Hiroshi Nakajima4Masayuki Tanaka5Daiji Kasahara6Noriko Kobayashi7Noriyuki Futagawa8Compound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, JapanCompound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, JapanCompound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, JapanCompound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, JapanCompound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, JapanCompound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, JapanCompound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, JapanCompound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, JapanCompound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, JapanA wafer-bonded vertical-cavity surface-emitting laser (VCSEL) was demonstrated by surface-activated bonding (SAB) of a GaAs-based distributed Bragg reflector (DBR) on a Ge substrate. Current injection lasing was achieved at the 1380 nm band under continuous-wave operation with AlGaInAs-based multi-quantum wells and a buried tunnel junction for current and optical confinement. The thermal conductivity of the VCSELs bonded by SAB was superior to that of InP VCSELs owing to high heat dissipation of GaAs DBR. This bonding method is suitable for short-wavelength infrared VCSELs and various other applications, including sensing, data communication, and silicon photonics.https://doi.org/10.35848/1882-0786/adaa4csurface-activated bondingshort-wavelength infraredvertical-cavity surface-emitting laser |
| spellingShingle | Tomomasa Watanabe Mikihiro Yokozeki Masashi Takanohashi Michinori Shiomi Hiroshi Nakajima Masayuki Tanaka Daiji Kasahara Noriko Kobayashi Noriyuki Futagawa 1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate Applied Physics Express surface-activated bonding short-wavelength infrared vertical-cavity surface-emitting laser |
| title | 1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate |
| title_full | 1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate |
| title_fullStr | 1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate |
| title_full_unstemmed | 1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate |
| title_short | 1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate |
| title_sort | 1380 nm vcsels using surface activated bonding of gaas based dbrs on a ge substrate |
| topic | surface-activated bonding short-wavelength infrared vertical-cavity surface-emitting laser |
| url | https://doi.org/10.35848/1882-0786/adaa4c |
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