Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination
This work reports the fabrication and characterization of a NiOx/β-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV breakdown voltage, ultra-low reverse current leakage under hig...
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AIP Publishing LLC
2025-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0251069 |
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| author | Yizheng Liu Saurav Roy Carl Peterson Arkka Bhattacharyya Sriram Krishnamoorthy |
| author_facet | Yizheng Liu Saurav Roy Carl Peterson Arkka Bhattacharyya Sriram Krishnamoorthy |
| author_sort | Yizheng Liu |
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| description | This work reports the fabrication and characterization of a NiOx/β-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV breakdown voltage, ultra-low reverse current leakage under high reverse bias, and a high junction electric field (>3.34 MV/cm). The heterojunction diodes are fabricated via bilayer NiOx sputtering followed by self-aligned plasma-etching for field-termination on both large (1-mm2) and small area (300/100-μm diameter) devices. The HJD exhibits an ∼135 A/cm2 forward current density at 5 V with a rectifying ratio of ∼1010. The minimum differential specific on-resistance was measured to be 17.26/11.64 mΩ cm2 (with/without current spreading). The breakdown voltage on a 100-μm diameter pad was measured to be greater than 3 kV with a noise floor-level reverse leakage current density (10−8 ∼ 10−6 A/cm2) up to 3 kV, accomplishing a parallel-plane junction electric field to be at least 3.34 MV/cm at 3 kV with a power figure of merit >0.52/>0.78 GW/cm2 (with/without current spreading). The temperature-dependent forward current density–voltage (J–V) measurements were performed from room temperature (25 °C) to 200 °C, which showed a temperature coefficient of resistance (α) of 1.56, lower than the value of SiC Schottky barrier diodes. |
| format | Article |
| id | doaj-art-9b86891e58914aa3b7a0e38409dcdb88 |
| institution | Kabale University |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | AIP Publishing LLC |
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| series | AIP Advances |
| spelling | doaj-art-9b86891e58914aa3b7a0e38409dcdb882025-02-03T16:40:42ZengAIP Publishing LLCAIP Advances2158-32262025-01-01151015114015114-610.1063/5.0251069Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-terminationYizheng Liu0Saurav Roy1Carl Peterson2Arkka Bhattacharyya3Sriram Krishnamoorthy4Department of Materials, University of California Santa Barbara, Santa Barbara, California 93106, USADepartment of Materials, University of California Santa Barbara, Santa Barbara, California 93106, USADepartment of Materials, University of California Santa Barbara, Santa Barbara, California 93106, USADepartment of Materials, University of California Santa Barbara, Santa Barbara, California 93106, USADepartment of Materials, University of California Santa Barbara, Santa Barbara, California 93106, USAThis work reports the fabrication and characterization of a NiOx/β-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV breakdown voltage, ultra-low reverse current leakage under high reverse bias, and a high junction electric field (>3.34 MV/cm). The heterojunction diodes are fabricated via bilayer NiOx sputtering followed by self-aligned plasma-etching for field-termination on both large (1-mm2) and small area (300/100-μm diameter) devices. The HJD exhibits an ∼135 A/cm2 forward current density at 5 V with a rectifying ratio of ∼1010. The minimum differential specific on-resistance was measured to be 17.26/11.64 mΩ cm2 (with/without current spreading). The breakdown voltage on a 100-μm diameter pad was measured to be greater than 3 kV with a noise floor-level reverse leakage current density (10−8 ∼ 10−6 A/cm2) up to 3 kV, accomplishing a parallel-plane junction electric field to be at least 3.34 MV/cm at 3 kV with a power figure of merit >0.52/>0.78 GW/cm2 (with/without current spreading). The temperature-dependent forward current density–voltage (J–V) measurements were performed from room temperature (25 °C) to 200 °C, which showed a temperature coefficient of resistance (α) of 1.56, lower than the value of SiC Schottky barrier diodes.http://dx.doi.org/10.1063/5.0251069 |
| spellingShingle | Yizheng Liu Saurav Roy Carl Peterson Arkka Bhattacharyya Sriram Krishnamoorthy Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination AIP Advances |
| title | Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination |
| title_full | Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination |
| title_fullStr | Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination |
| title_full_unstemmed | Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination |
| title_short | Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination |
| title_sort | ultra low reverse leakage niox β ga2o3 heterojunction diode achieving breakdown voltage 3 kv with plasma etch field termination |
| url | http://dx.doi.org/10.1063/5.0251069 |
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