APA (7th ed.) Citation

Liu, Y., Roy, S., Peterson, C., Bhattacharyya, A., & Krishnamoorthy, S. Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination. AIP Publishing LLC.

Chicago Style (17th ed.) Citation

Liu, Yizheng, Saurav Roy, Carl Peterson, Arkka Bhattacharyya, and Sriram Krishnamoorthy. Ultra-low Reverse Leakage NiOx/β-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-termination. AIP Publishing LLC.

MLA (9th ed.) Citation

Liu, Yizheng, et al. Ultra-low Reverse Leakage NiOx/β-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-termination. AIP Publishing LLC.