Fabrication and Characterization of Multilayer Capacitors Buried in a Low Temperature Co-Fired Ceramic Substrate
Multilayer ceramic capacitors designed to be embedded in a low temperature co-fired ceramic substrate have been successfully fabricated. Low and high value capacitors were respectively embedded in the low K multilayer substrate and high K dielectric layer. The buried capacitor has a capacitance dens...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/25127 |
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| Summary: | Multilayer ceramic capacitors designed to be embedded in a low
temperature co-fired ceramic substrate have been successfully
fabricated. Low and high value capacitors were respectively
embedded in the low K multilayer substrate and high K dielectric
layer. The buried capacitor has a capacitance density range (1
kHz) from about 220 pF/cm2 to 30 nF/cm2. The design took
material compatibility and shrinkage characteristics specifically
into account. The effects of heating rate and peak temperature
holding time on the densification of the laminate were studied.
The scanning electron micrograph revealed no evident cracking in
the fired components. The electrical properties of the buried
capacitors such as dissipation factor, insulation resistance and
breakdown voltage were studied and found to be good for device
application. The temperature dependence of the dissipation factor
and coefficient of capacitance for the buried capacitor was also
studied. |
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| ISSN: | 0882-7516 1563-5031 |