Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique
In heterojunction solar cells, a-Si:H/c-Si heterointerface is of significant importance, since the heterointerface characteristics directly affect junction properties and thus solar cell efficiency. In this study, we have performed time resolved microwave conductivity (TRMC) measurements on n-type c...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/304580 |
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| author | Amornrat Limmanee Joaquim Nassar Igor P. Sobkowicz Jaran Sritharathikhun Kobsak Sriprapha Guillaume Courtois Francois Moreau Pere Roca I Cabarrocas |
| author_facet | Amornrat Limmanee Joaquim Nassar Igor P. Sobkowicz Jaran Sritharathikhun Kobsak Sriprapha Guillaume Courtois Francois Moreau Pere Roca I Cabarrocas |
| author_sort | Amornrat Limmanee |
| collection | DOAJ |
| description | In heterojunction solar cells, a-Si:H/c-Si heterointerface is of significant importance, since the heterointerface characteristics directly affect junction properties and thus solar cell efficiency. In this study, we have performed time resolved microwave conductivity (TRMC) measurements on n-type c-Si wafers passivated on both sides with intrinsic and doped a-Si:H layers in order to investigate electrical property and passivation quality of the a-Si:H/c-Si heterojunctions. It was found that the TRMC decay time and decay curve shape varied with the laser wavelength and power intensity and also depended on sample structures. By using 1064 nm laser pulse with high excitation, differences in the decay curve shape between samples with and without p-n junction were observed. The samples containing p-n junction(s) had unique slow decay mode, after the initial fast decay, which we ascribed to the release of carriers from the low-mobility amorphous layer into the high-mobility crystalline wafer as the built-in field of the junction was restored. Experimental results suggest that the TRMC is useful nondestructive technique which is suitable for primary check of the a-Si:H/c-Si heterojunctions during the solar cell fabrication process. |
| format | Article |
| id | doaj-art-9aecbdf131394263a85cff7fdf2b75fe |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-9aecbdf131394263a85cff7fdf2b75fe2025-02-03T05:48:39ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/304580304580Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity TechniqueAmornrat Limmanee0Joaquim Nassar1Igor P. Sobkowicz2Jaran Sritharathikhun3Kobsak Sriprapha4Guillaume Courtois5Francois Moreau6Pere Roca I Cabarrocas7Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandLPICM, CNRS-Ecole Polytechnique, Route de Saclay, 91128 Palaiseau, FranceLPICM, CNRS-Ecole Polytechnique, Route de Saclay, 91128 Palaiseau, FranceSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandLPICM, CNRS-Ecole Polytechnique, Route de Saclay, 91128 Palaiseau, FranceLPICM, CNRS-Ecole Polytechnique, Route de Saclay, 91128 Palaiseau, FranceLPICM, CNRS-Ecole Polytechnique, Route de Saclay, 91128 Palaiseau, FranceIn heterojunction solar cells, a-Si:H/c-Si heterointerface is of significant importance, since the heterointerface characteristics directly affect junction properties and thus solar cell efficiency. In this study, we have performed time resolved microwave conductivity (TRMC) measurements on n-type c-Si wafers passivated on both sides with intrinsic and doped a-Si:H layers in order to investigate electrical property and passivation quality of the a-Si:H/c-Si heterojunctions. It was found that the TRMC decay time and decay curve shape varied with the laser wavelength and power intensity and also depended on sample structures. By using 1064 nm laser pulse with high excitation, differences in the decay curve shape between samples with and without p-n junction were observed. The samples containing p-n junction(s) had unique slow decay mode, after the initial fast decay, which we ascribed to the release of carriers from the low-mobility amorphous layer into the high-mobility crystalline wafer as the built-in field of the junction was restored. Experimental results suggest that the TRMC is useful nondestructive technique which is suitable for primary check of the a-Si:H/c-Si heterojunctions during the solar cell fabrication process.http://dx.doi.org/10.1155/2014/304580 |
| spellingShingle | Amornrat Limmanee Joaquim Nassar Igor P. Sobkowicz Jaran Sritharathikhun Kobsak Sriprapha Guillaume Courtois Francois Moreau Pere Roca I Cabarrocas Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique International Journal of Photoenergy |
| title | Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique |
| title_full | Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique |
| title_fullStr | Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique |
| title_full_unstemmed | Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique |
| title_short | Characterization of a-Si:H/c-Si Heterojunctions by Time Resolved Microwave Conductivity Technique |
| title_sort | characterization of a si h c si heterojunctions by time resolved microwave conductivity technique |
| url | http://dx.doi.org/10.1155/2014/304580 |
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