Deep Level Saturation Spectroscopy

We review the “Deep Level Saturation Spectroscopy” (DLSS) as the nonlinear method to study the deep local defects in semiconductors. The essence of a method is determined by the processes of sufficiently strong laser modulation (up to saturation) of quasistationar two-step absorption of the probe li...

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Main Author: Vladimir Gavryushin
Format: Article
Language:English
Published: Wiley 2012-01-01
Series:International Journal of Optics
Online Access:http://dx.doi.org/10.1155/2012/505023
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author Vladimir Gavryushin
author_facet Vladimir Gavryushin
author_sort Vladimir Gavryushin
collection DOAJ
description We review the “Deep Level Saturation Spectroscopy” (DLSS) as the nonlinear method to study the deep local defects in semiconductors. The essence of a method is determined by the processes of sufficiently strong laser modulation (up to saturation) of quasistationar two-step absorption of the probe light via deep levels (DLs). DLSS is based on nonequilibrium processes of the optically induced population changes for deep levels which lead to the changes in an impurity absorption. This method allows us the separation of the spectral contributions from different deep centers (even in the case of their full spectral overlap), on the basis of the difference of their optical activity (photon capture cross-sections) and of their electroactivity difference (carriers capture coefficients). As shown, DLSS is allowed to determine directly the main set of phenomenological parameters (cross-sections, concentration, bound energy, etc.) for deep local defects, their content and energy position in the band gap. Some important aspects of DLSS were shown also: the possibility to connect directly the measured data to the local centers which are participating in radiative recombination, and also the possibility to study directly the phonon relaxation processes in the localized states of deep defects.
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spelling doaj-art-9aa1a96d746b4e4c8edac9f241ffb5b02025-08-20T03:36:53ZengWileyInternational Journal of Optics1687-93841687-93922012-01-01201210.1155/2012/505023505023Deep Level Saturation SpectroscopyVladimir Gavryushin0Semiconductors Physics Department Institute of Applied Research, Vilnius University, 10222 Vilnius, LithuaniaWe review the “Deep Level Saturation Spectroscopy” (DLSS) as the nonlinear method to study the deep local defects in semiconductors. The essence of a method is determined by the processes of sufficiently strong laser modulation (up to saturation) of quasistationar two-step absorption of the probe light via deep levels (DLs). DLSS is based on nonequilibrium processes of the optically induced population changes for deep levels which lead to the changes in an impurity absorption. This method allows us the separation of the spectral contributions from different deep centers (even in the case of their full spectral overlap), on the basis of the difference of their optical activity (photon capture cross-sections) and of their electroactivity difference (carriers capture coefficients). As shown, DLSS is allowed to determine directly the main set of phenomenological parameters (cross-sections, concentration, bound energy, etc.) for deep local defects, their content and energy position in the band gap. Some important aspects of DLSS were shown also: the possibility to connect directly the measured data to the local centers which are participating in radiative recombination, and also the possibility to study directly the phonon relaxation processes in the localized states of deep defects.http://dx.doi.org/10.1155/2012/505023
spellingShingle Vladimir Gavryushin
Deep Level Saturation Spectroscopy
International Journal of Optics
title Deep Level Saturation Spectroscopy
title_full Deep Level Saturation Spectroscopy
title_fullStr Deep Level Saturation Spectroscopy
title_full_unstemmed Deep Level Saturation Spectroscopy
title_short Deep Level Saturation Spectroscopy
title_sort deep level saturation spectroscopy
url http://dx.doi.org/10.1155/2012/505023
work_keys_str_mv AT vladimirgavryushin deeplevelsaturationspectroscopy