Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. An evaluation of the relative position of the dopant associated energy states has been carried out....
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| Format: | Article |
| Language: | English |
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Wiley
1993-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1993/13729 |
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| _version_ | 1832563041140473856 |
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| author | S. J. Wen G. Campet J. P. Manaud |
| author_facet | S. J. Wen G. Campet J. P. Manaud |
| author_sort | S. J. Wen |
| collection | DOAJ |
| description | Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied.
Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge.
An evaluation of the relative position of the dopant associated energy states has been carried out. |
| format | Article |
| id | doaj-art-9a4cc7d5159e42ce93fcc208e2358c6b |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1993-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-9a4cc7d5159e42ce93fcc208e2358c6b2025-02-03T01:21:13ZengWileyActive and Passive Electronic Components0882-75161563-50311993-01-01152677410.1155/1993/13729Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition TemperatureS. J. Wen0G. Campet1J. P. Manaud2Laboratoire de Chimie du Solide du CNRS, Université Bordeaux I, 351 Cours de la Libération, Talence 33405, FranceLaboratoire de Chimie du Solide du CNRS, Université Bordeaux I, 351 Cours de la Libération, Talence 33405, FranceLaboratoire de Chimie du Solide du CNRS, Université Bordeaux I, 351 Cours de la Libération, Talence 33405, FranceUndoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. An evaluation of the relative position of the dopant associated energy states has been carried out.http://dx.doi.org/10.1155/1993/13729 |
| spellingShingle | S. J. Wen G. Campet J. P. Manaud Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature Active and Passive Electronic Components |
| title | Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films
(ITO: Ge) Obtained at Low Deposition Temperature |
| title_full | Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films
(ITO: Ge) Obtained at Low Deposition Temperature |
| title_fullStr | Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films
(ITO: Ge) Obtained at Low Deposition Temperature |
| title_full_unstemmed | Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films
(ITO: Ge) Obtained at Low Deposition Temperature |
| title_short | Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films
(ITO: Ge) Obtained at Low Deposition Temperature |
| title_sort | physical properties of sputtered germanium doped indium tin oxide films ito ge obtained at low deposition temperature |
| url | http://dx.doi.org/10.1155/1993/13729 |
| work_keys_str_mv | AT sjwen physicalpropertiesofsputteredgermaniumdopedindiumtinoxidefilmsitogeobtainedatlowdepositiontemperature AT gcampet physicalpropertiesofsputteredgermaniumdopedindiumtinoxidefilmsitogeobtainedatlowdepositiontemperature AT jpmanaud physicalpropertiesofsputteredgermaniumdopedindiumtinoxidefilmsitogeobtainedatlowdepositiontemperature |