Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET
Threshold voltage (VTH) is the indispensable vital parameter in MOSFET designing, modeling, and operation. Diverse expounds and extraction methods exist to model the on-off transition characteristics of the device. The governing gauge for efficient threshold voltage definition and extraction method...
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| Format: | Article |
| Language: | English |
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Wiley
2017-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2017/4678571 |
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| _version_ | 1850171621976834048 |
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| author | Yashu Swami Sanjeev Rai |
| author_facet | Yashu Swami Sanjeev Rai |
| author_sort | Yashu Swami |
| collection | DOAJ |
| description | Threshold voltage (VTH) is the indispensable vital parameter in MOSFET designing, modeling, and operation. Diverse expounds and extraction methods exist to model the on-off transition characteristics of the device. The governing gauge for efficient threshold voltage definition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology node. The outcomes of extraction methods diverge from the exact values due to various short-channel effects (SCEs) and nonidealities present in the device. A new approach to define and extract the real value of VTH of MOSFET is proposed in the manuscript. The subsequent novel enhanced SCE-independent VTH extraction method named “hybrid extrapolation VTH extraction method” (HEEM) is elaborated, modeled, and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are verified by extensive 2D TCAD simulation and confirmed analytically at various technology nodes. |
| format | Article |
| id | doaj-art-9a23c1e089fe4872b30e3b86d49f7772 |
| institution | OA Journals |
| issn | 1687-9503 1687-9511 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Nanotechnology |
| spelling | doaj-art-9a23c1e089fe4872b30e3b86d49f77722025-08-20T02:20:15ZengWileyJournal of Nanotechnology1687-95031687-95112017-01-01201710.1155/2017/46785714678571Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFETYashu Swami0Sanjeev Rai1Department of ECE, MNNIT Allahabad, Allahabad 211004, IndiaDepartment of ECE, MNNIT Allahabad, Allahabad 211004, IndiaThreshold voltage (VTH) is the indispensable vital parameter in MOSFET designing, modeling, and operation. Diverse expounds and extraction methods exist to model the on-off transition characteristics of the device. The governing gauge for efficient threshold voltage definition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology node. The outcomes of extraction methods diverge from the exact values due to various short-channel effects (SCEs) and nonidealities present in the device. A new approach to define and extract the real value of VTH of MOSFET is proposed in the manuscript. The subsequent novel enhanced SCE-independent VTH extraction method named “hybrid extrapolation VTH extraction method” (HEEM) is elaborated, modeled, and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are verified by extensive 2D TCAD simulation and confirmed analytically at various technology nodes.http://dx.doi.org/10.1155/2017/4678571 |
| spellingShingle | Yashu Swami Sanjeev Rai Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET Journal of Nanotechnology |
| title | Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET |
| title_full | Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET |
| title_fullStr | Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET |
| title_full_unstemmed | Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET |
| title_short | Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET |
| title_sort | modeling simulation and analysis of novel threshold voltage definition for nano mosfet |
| url | http://dx.doi.org/10.1155/2017/4678571 |
| work_keys_str_mv | AT yashuswami modelingsimulationandanalysisofnovelthresholdvoltagedefinitionfornanomosfet AT sanjeevrai modelingsimulationandanalysisofnovelthresholdvoltagedefinitionfornanomosfet |