An Efficient Forward-Biased Si CMOS LED With High Optical Power Density and Nonlinear Optical-Power-Current Characteristic
A forward-biased silicon-based light-emitting device (Si-LED) was designed and fabricated by standard 0.18 <italic>μ</italic>m complementary metal-oxide-semiconductor (CMOS) technology without any modification. For the Si-LED, wedge-shaped electrodes and needle-like tip were d...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8639069/ |
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