A review of GaN RF devices and power amplifiers for 5G communication applications
In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power amplifier, a critical component with stringent specification requirements that dictates the performance of the transmitter. The gallium nitride (GaN) device, with its superior inherent properties, is surfacing...
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| Format: | Article |
| Language: | English |
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KeAi Communications Co. Ltd.
2025-01-01
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| Series: | Fundamental Research |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2667325823003023 |
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| author | Hao Lu Meng Zhang Ling Yang Bin Hou Rafael Perez Martinez Minhan Mi Jiale Du Longge Deng Mei Wu Srabanti Chowdhury Xiaohua Ma Yue Hao |
| author_facet | Hao Lu Meng Zhang Ling Yang Bin Hou Rafael Perez Martinez Minhan Mi Jiale Du Longge Deng Mei Wu Srabanti Chowdhury Xiaohua Ma Yue Hao |
| author_sort | Hao Lu |
| collection | DOAJ |
| description | In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power amplifier, a critical component with stringent specification requirements that dictates the performance of the transmitter. The gallium nitride (GaN) device, with its superior inherent properties, is surfacing as a front-runner for power amplifier applications. The increasing demand for high frequency, high linearity, and cost-effective GaN power amplifiers is driven by anticipated traffic surges and the need for extensive 5G deployment. This paper offers a thorough review and future perspective on research developments in RF GaN device technology. It encompasses critical issues in advanced device and circuit technology, with a focus on high frequency, high linearity, cost-effective GaN-on-Si high electron mobility transistors (HEMTs), and compact modeling. This work aims to serve as a guide for the utilization of GaN HEMTs in 5G communication applications. |
| format | Article |
| id | doaj-art-97d8398f5d614835b83bf5a23999bfbd |
| institution | Kabale University |
| issn | 2667-3258 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | KeAi Communications Co. Ltd. |
| record_format | Article |
| series | Fundamental Research |
| spelling | doaj-art-97d8398f5d614835b83bf5a23999bfbd2025-01-29T05:02:33ZengKeAi Communications Co. Ltd.Fundamental Research2667-32582025-01-0151315331A review of GaN RF devices and power amplifiers for 5G communication applicationsHao Lu0Meng Zhang1Ling Yang2Bin Hou3Rafael Perez Martinez4Minhan Mi5Jiale Du6Longge Deng7Mei Wu8Srabanti Chowdhury9Xiaohua Ma10Yue Hao11School of Microelectronics, Xidian University, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Xi'an 710071, China; Corresponding authors.School of Microelectronics, Xidian University, Xi'an 710071, China; Corresponding authors.Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA; Corresponding authors.School of Microelectronics, Xidian University, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Xi'an 710071, ChinaDepartment of Electrical Engineering, Stanford University, Stanford, CA 94305, USASchool of Microelectronics, Xidian University, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Xi'an 710071, ChinaIn the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power amplifier, a critical component with stringent specification requirements that dictates the performance of the transmitter. The gallium nitride (GaN) device, with its superior inherent properties, is surfacing as a front-runner for power amplifier applications. The increasing demand for high frequency, high linearity, and cost-effective GaN power amplifiers is driven by anticipated traffic surges and the need for extensive 5G deployment. This paper offers a thorough review and future perspective on research developments in RF GaN device technology. It encompasses critical issues in advanced device and circuit technology, with a focus on high frequency, high linearity, cost-effective GaN-on-Si high electron mobility transistors (HEMTs), and compact modeling. This work aims to serve as a guide for the utilization of GaN HEMTs in 5G communication applications.http://www.sciencedirect.com/science/article/pii/S26673258230030235GGallium nitrideHigh frequencyHigh linearityGaN-on-Si HEMTs |
| spellingShingle | Hao Lu Meng Zhang Ling Yang Bin Hou Rafael Perez Martinez Minhan Mi Jiale Du Longge Deng Mei Wu Srabanti Chowdhury Xiaohua Ma Yue Hao A review of GaN RF devices and power amplifiers for 5G communication applications Fundamental Research 5G Gallium nitride High frequency High linearity GaN-on-Si HEMTs |
| title | A review of GaN RF devices and power amplifiers for 5G communication applications |
| title_full | A review of GaN RF devices and power amplifiers for 5G communication applications |
| title_fullStr | A review of GaN RF devices and power amplifiers for 5G communication applications |
| title_full_unstemmed | A review of GaN RF devices and power amplifiers for 5G communication applications |
| title_short | A review of GaN RF devices and power amplifiers for 5G communication applications |
| title_sort | review of gan rf devices and power amplifiers for 5g communication applications |
| topic | 5G Gallium nitride High frequency High linearity GaN-on-Si HEMTs |
| url | http://www.sciencedirect.com/science/article/pii/S2667325823003023 |
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