A review of GaN RF devices and power amplifiers for 5G communication applications
In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power amplifier, a critical component with stringent specification requirements that dictates the performance of the transmitter. The gallium nitride (GaN) device, with its superior inherent properties, is surfacing...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
KeAi Communications Co. Ltd.
2025-01-01
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| Series: | Fundamental Research |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2667325823003023 |
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| Summary: | In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power amplifier, a critical component with stringent specification requirements that dictates the performance of the transmitter. The gallium nitride (GaN) device, with its superior inherent properties, is surfacing as a front-runner for power amplifier applications. The increasing demand for high frequency, high linearity, and cost-effective GaN power amplifiers is driven by anticipated traffic surges and the need for extensive 5G deployment. This paper offers a thorough review and future perspective on research developments in RF GaN device technology. It encompasses critical issues in advanced device and circuit technology, with a focus on high frequency, high linearity, cost-effective GaN-on-Si high electron mobility transistors (HEMTs), and compact modeling. This work aims to serve as a guide for the utilization of GaN HEMTs in 5G communication applications. |
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| ISSN: | 2667-3258 |