17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching
For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/248182 |
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| author | Ji-Myung Shim Hyun-Woo Lee Kyeong-Yeon Cho Jae-Keun Seo Ji-Soo Kim Eun-Joo Lee Jun-Young Choi Dong-Joon Oh Jeong-Eun Shin Ji-Sun Kim Ji-Hyun Kong Soo-Hong Lee Hae-Seok Lee |
| author_facet | Ji-Myung Shim Hyun-Woo Lee Kyeong-Yeon Cho Jae-Keun Seo Ji-Soo Kim Eun-Joo Lee Jun-Young Choi Dong-Joon Oh Jeong-Eun Shin Ji-Sun Kim Ji-Hyun Kong Soo-Hong Lee Hae-Seok Lee |
| author_sort | Ji-Myung Shim |
| collection | DOAJ |
| description | For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop in V
oc
and FF. RIE texturing with a proper DRE had sufficiently higher short circuit current (Isc) than acidic-textured samples without a drop in open circuit voltage (V
oc
). And in order to improve efficiency of mc-Si solar cell, we applied RIE texturing with optimized DRE condition to selective emitter structure. In comparison with the acidic-textured solar cells, RIE-textured solar cells have above 200 mA absolute gain in Isc. And optimized RIE samples with a DRE by HNO3/HF mixture showed 17.6% conversion efficiency, which were made using an industrial screen printing process with selective emitter structure. |
| format | Article |
| id | doaj-art-97b8a5d7a02c4e3ea6158cd740fdee83 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-97b8a5d7a02c4e3ea6158cd740fdee832025-02-03T05:58:48ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/24818224818217.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal EtchingJi-Myung Shim0Hyun-Woo Lee1Kyeong-Yeon Cho2Jae-Keun Seo3Ji-Soo Kim4Eun-Joo Lee5Jun-Young Choi6Dong-Joon Oh7Jeong-Eun Shin8Ji-Sun Kim9Ji-Hyun Kong10Soo-Hong Lee11Hae-Seok Lee12R&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaDepartment of Electronic Engineering, Sejong University, Seoul 143-747, Republic of KoreaR&D Center, Solar Cell Division, Shinsung Solar Energy, Seongnam-Si, Gyeonggi-do 463-420, Republic of KoreaFor lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop in V oc and FF. RIE texturing with a proper DRE had sufficiently higher short circuit current (Isc) than acidic-textured samples without a drop in open circuit voltage (V oc ). And in order to improve efficiency of mc-Si solar cell, we applied RIE texturing with optimized DRE condition to selective emitter structure. In comparison with the acidic-textured solar cells, RIE-textured solar cells have above 200 mA absolute gain in Isc. And optimized RIE samples with a DRE by HNO3/HF mixture showed 17.6% conversion efficiency, which were made using an industrial screen printing process with selective emitter structure.http://dx.doi.org/10.1155/2012/248182 |
| spellingShingle | Ji-Myung Shim Hyun-Woo Lee Kyeong-Yeon Cho Jae-Keun Seo Ji-Soo Kim Eun-Joo Lee Jun-Young Choi Dong-Joon Oh Jeong-Eun Shin Ji-Sun Kim Ji-Hyun Kong Soo-Hong Lee Hae-Seok Lee 17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching International Journal of Photoenergy |
| title | 17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching |
| title_full | 17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching |
| title_fullStr | 17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching |
| title_full_unstemmed | 17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching |
| title_short | 17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching |
| title_sort | 17 6 conversion efficiency multicrystalline silicon solar cells using the reactive ion etching with the damage removal etching |
| url | http://dx.doi.org/10.1155/2012/248182 |
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