Development of 6-inch h-BN thick wafers
We report the first successful synthesis of 40 μm thick h-BN wafers with a diameter of 6 in. using hydride vapor phase epitaxy. This accomplishment was made possible by employing BCl3 as the B precursor to eliminate carbon impurities, utilizing inert N2 as the carrier and separation gas to isolate B...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-06-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0276437 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|