High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperatu...

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Bibliographic Details
Main Authors: Wei-Cheng Kuo, Hung-Chi Hsieh, Wu Chih-Hung, Huang Wen-Hsiang, Chien-Chieh Lee, Jenq-Yang Chang
Format: Article
Language:English
Published: Wiley 2016-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2016/7218310
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