Kuo, W., Hsieh, H., Chih-Hung, W., Wen-Hsiang, H., Lee, C., & Chang, J. High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer. Wiley.
Chicago Style (17th ed.) CitationKuo, Wei-Cheng, Hung-Chi Hsieh, Wu Chih-Hung, Huang Wen-Hsiang, Chien-Chieh Lee, and Jenq-Yang Chang. High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer. Wiley.
MLA (9th ed.) CitationKuo, Wei-Cheng, et al. High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer. Wiley.
Warning: These citations may not always be 100% accurate.