Design and implementation of a 1.65~3 GHz 500 watts power amplifier

Design and implementation of a 1.65~3 GHz 500 watts power amplifier

Modern transmission systems have put forward higher and higher requirements for the working frequency band and power level of power amplifiers, and the design of power amplifiers based on GaN power devices can meet these new requirements. In this paper, GaN HEMT is used to design the basic power amp...

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Bibliographic Details
Main Authors: Xue Xin, Dong Liang, Wu Jiaqian
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2022-04-01
Series:Dianzi Jishu Yingyong
Subjects:
gan power device
high power
high efficiency
Online Access:http://www.chinaaet.com/article/3000148336
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