Non Quasi-Static Model of DG Junctionless FETs

Non Quasi-Static Model of DG Junctionless FETs

In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC and AC models by incorporating time-dependent...

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Bibliographic Details
Main Authors: Mohammad Bavir, Abdollah Abbasi, Ali Asghar Orouji, Farzan Jazaeri, Jean-Michel Sallese
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Double-gate field-effect transistors
junctionless FETs
non-quasi static model
charge-based
Online Access:https://ieeexplore.ieee.org/document/10722036/
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