AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz
Aluminum Scandium Nitride (AlScN) is an attractive material for use as a lattice-matched epitaxial barrier layer in GaN high-electron mobility transistors (HEMTs). Here we report the device fabrication, direct current (DC) and radio frequency (RF) characteristics of epitaxial AlScN/AlN/GaN HEMTs on...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ada86b |
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| author | Kazuki Nomoto Joseph Casamento Thai-Son Nguyen Lei Li Hyunjea Lee Chandrashekhar Savant Austin Lee Hickman Takuya Maeda Jimy Encomendero Ved Gund Timothy Vasen Shamima Afroz Daniel Hannan James C. M. Hwang Debdeep Jena Huili Grace Xing |
| author_facet | Kazuki Nomoto Joseph Casamento Thai-Son Nguyen Lei Li Hyunjea Lee Chandrashekhar Savant Austin Lee Hickman Takuya Maeda Jimy Encomendero Ved Gund Timothy Vasen Shamima Afroz Daniel Hannan James C. M. Hwang Debdeep Jena Huili Grace Xing |
| author_sort | Kazuki Nomoto |
| collection | DOAJ |
| description | Aluminum Scandium Nitride (AlScN) is an attractive material for use as a lattice-matched epitaxial barrier layer in GaN high-electron mobility transistors (HEMTs). Here we report the device fabrication, direct current (DC) and radio frequency (RF) characteristics of epitaxial AlScN/AlN/GaN HEMTs on SiC substrates with regrown ohmic contacts. These devices show record high on-current of over 4 A/mm, high cutoff frequency ( f _T ) of 92.4 GHz and maximum oscillation frequency ( ${f}_{{\rm{MAX}}}$ ) of 134.3 GHz. |
| format | Article |
| id | doaj-art-951d60b872c4439d8bcd52f797208408 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-951d60b872c4439d8bcd52f7972084082025-01-28T05:13:07ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101650610.35848/1882-0786/ada86bAlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHzKazuki Nomoto0Joseph Casamento1Thai-Son Nguyen2Lei Li3Hyunjea Lee4Chandrashekhar Savant5Austin Lee Hickman6Takuya Maeda7Jimy Encomendero8https://orcid.org/0000-0002-1597-1761Ved Gund9Timothy Vasen10Shamima Afroz11Daniel Hannan12James C. M. Hwang13Debdeep Jena14Huili Grace Xing15School of Electrical and Computer Engineering, Cornell University , Ithaca, NY 14853, United States of AmericaDepartment of Materials Science and Engineering, Cornell University , Ithaca, NY 14853, United States of AmericaDepartment of Materials Science and Engineering, Cornell University , Ithaca, NY 14853, United States of AmericaSchool of Electrical and Computer Engineering, Cornell University , Ithaca, NY 14853, United States of AmericaSchool of Electrical and Computer Engineering, Cornell University , Ithaca, NY 14853, United States of AmericaDepartment of Materials Science and Engineering, Cornell University , Ithaca, NY 14853, United States of AmericaSchool of Electrical and Computer Engineering, Cornell University , Ithaca, NY 14853, United States of AmericaKavli Institute at Cornell for Nanoscale Science, Cornell University , Ithaca, NY 14853, United States of AmericaSchool of Electrical and Computer Engineering, Cornell University , Ithaca, NY 14853, United States of AmericaDepartment of Materials Science and Engineering, Cornell University , Ithaca, NY 14853, United States of AmericaNorthrop Grumman Mission Systems Advanced Technology Laboratory, Linthicum, MD 21090, United States of AmericaNorthrop Grumman Mission Systems Advanced Technology Laboratory, Linthicum, MD 21090, United States of AmericaNorthrop Grumman Mission Systems Advanced Technology Laboratory, Linthicum, MD 21090, United States of AmericaDepartment of Materials Science and Engineering, Cornell University , Ithaca, NY 14853, United States of AmericaSchool of Electrical and Computer Engineering, Cornell University , Ithaca, NY 14853, United States of America; Department of Materials Science and Engineering, Cornell University , Ithaca, NY 14853, United States of America; Kavli Institute at Cornell for Nanoscale Science, Cornell University , Ithaca, NY 14853, United States of AmericaSchool of Electrical and Computer Engineering, Cornell University , Ithaca, NY 14853, United States of America; Department of Materials Science and Engineering, Cornell University , Ithaca, NY 14853, United States of America; Kavli Institute at Cornell for Nanoscale Science, Cornell University , Ithaca, NY 14853, United States of AmericaAluminum Scandium Nitride (AlScN) is an attractive material for use as a lattice-matched epitaxial barrier layer in GaN high-electron mobility transistors (HEMTs). Here we report the device fabrication, direct current (DC) and radio frequency (RF) characteristics of epitaxial AlScN/AlN/GaN HEMTs on SiC substrates with regrown ohmic contacts. These devices show record high on-current of over 4 A/mm, high cutoff frequency ( f _T ) of 92.4 GHz and maximum oscillation frequency ( ${f}_{{\rm{MAX}}}$ ) of 134.3 GHz.https://doi.org/10.35848/1882-0786/ada86bfield effect transistorsheterostructuresohmic contactsalloysnitridessemiconductors |
| spellingShingle | Kazuki Nomoto Joseph Casamento Thai-Son Nguyen Lei Li Hyunjea Lee Chandrashekhar Savant Austin Lee Hickman Takuya Maeda Jimy Encomendero Ved Gund Timothy Vasen Shamima Afroz Daniel Hannan James C. M. Hwang Debdeep Jena Huili Grace Xing AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz Applied Physics Express field effect transistors heterostructures ohmic contacts alloys nitrides semiconductors |
| title | AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz |
| title_full | AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz |
| title_fullStr | AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz |
| title_full_unstemmed | AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz |
| title_short | AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz |
| title_sort | alscn gan hemts with 4 a mm on current and maximum oscillation frequency 130 ghz |
| topic | field effect transistors heterostructures ohmic contacts alloys nitrides semiconductors |
| url | https://doi.org/10.35848/1882-0786/ada86b |
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