AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz

AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz

Aluminum Scandium Nitride (AlScN) is an attractive material for use as a lattice-matched epitaxial barrier layer in GaN high-electron mobility transistors (HEMTs). Here we report the device fabrication, direct current (DC) and radio frequency (RF) characteristics of epitaxial AlScN/AlN/GaN HEMTs on...

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Bibliographic Details
Main Authors: Kazuki Nomoto, Joseph Casamento, Thai-Son Nguyen, Lei Li, Hyunjea Lee, Chandrashekhar Savant, Austin Lee Hickman, Takuya Maeda, Jimy Encomendero, Ved Gund, Timothy Vasen, Shamima Afroz, Daniel Hannan, James C. M. Hwang, Debdeep Jena, Huili Grace Xing
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
field effect transistors
heterostructures
ohmic contacts
alloys
nitrides
semiconductors
Online Access:https://doi.org/10.35848/1882-0786/ada86b
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Summary:Aluminum Scandium Nitride (AlScN) is an attractive material for use as a lattice-matched epitaxial barrier layer in GaN high-electron mobility transistors (HEMTs). Here we report the device fabrication, direct current (DC) and radio frequency (RF) characteristics of epitaxial AlScN/AlN/GaN HEMTs on SiC substrates with regrown ohmic contacts. These devices show record high on-current of over 4 A/mm, high cutoff frequency ( f _T ) of 92.4 GHz and maximum oscillation frequency ( ${f}_{{\rm{MAX}}}$ ) of 134.3 GHz.
ISSN:1882-0786

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