Improved magnetostriction of Tb-Dy-Fe/Dy–Cu multilayer films by introducing interfacial stress due to the semi coherent interface

Magnetostrictive thin films are commonly applied in micro-electro-mechanical system (MEMS). Tb-Dy-Fe thin films have large magnetostrictive strain and high response frequency, which can efficiently realize the conversion of mechanical energy and electromagnetic energy, and are very suitable for appl...

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Main Authors: Yuze Zhao, Jiheng Li, Xiaoqian Bao, Xuexu Gao
Format: Article
Language:English
Published: Elsevier 2025-01-01
Series:Journal of Materials Research and Technology
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Online Access:http://www.sciencedirect.com/science/article/pii/S2238785424030710
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_version_ 1832595339947802624
author Yuze Zhao
Jiheng Li
Xiaoqian Bao
Xuexu Gao
author_facet Yuze Zhao
Jiheng Li
Xiaoqian Bao
Xuexu Gao
author_sort Yuze Zhao
collection DOAJ
description Magnetostrictive thin films are commonly applied in micro-electro-mechanical system (MEMS). Tb-Dy-Fe thin films have large magnetostrictive strain and high response frequency, which can efficiently realize the conversion of mechanical energy and electromagnetic energy, and are very suitable for application in MEMS. In this work, magnetostrictive Tb0.3Dy0.7Fe2 single-layer films and Tb0.3Dy0.7Fe2/Dy0.5Cu0.5 multilayers were prepared by direct-current (DC) magnetron sputtering. The effects of microstructure and interface stress on magnetic properties were investigated. The microstructure of as-deposited multilayer films showed clearly the high degree of layer periodicity. After the heat treatment of 475 °C for 1 h, the layers of Tb0.3Dy0.7Fe2 and Dy0.5Cu0.5 have undergone crystallization. The semi-coherent interface was obtained between Tb-Dy-Fe layer and Dy–Cu layer in multilayer films, resulting in the compressive stress in the magnetic Tb-Dy-Fe layers. Magnetically, the coercivity Hc of multilayer films increased obviously compared that of single layer film, and further increased with the number of layers in a multilayer film. The change of coercivity may be attributed to the stress state of films. Compared with the 642 ppm of Tb0.3Dy0.7Fe2 single layer film under the magnetic field of 4000 Oe, the magnetostrictive strain of the [Tb0.3Dy0.7Fe2(50 nm)/Dy0.5Cu0.5(50 nm)]10 multilayer film reached 835 ppm under the same magnetic field. The increase of magnetostrictive strain in Tb0.3Dy0.7Fe2/Dy0.5Cu0.5 multilayer films was attributed to the interface compressive stress to the Tb-Dy-Fe layer through the Dy–Cu layer. The analysis of stress and strain distribution at the interface showed that Dy–Cu phase produced a maximum tensile strain of 3.8 %, and Tb-Dy-Fe phase correspondingly subjected to a significant compressive stress. By tailoring the anisotropy and magnetic domain structure through internal interface stress, it is expected to become an effective way to control the magnetic properties of magnetic thin films.
format Article
id doaj-art-93ef48f10c0042f18782120134a4a760
institution Kabale University
issn 2238-7854
language English
publishDate 2025-01-01
publisher Elsevier
record_format Article
series Journal of Materials Research and Technology
spelling doaj-art-93ef48f10c0042f18782120134a4a7602025-01-19T06:26:02ZengElsevierJournal of Materials Research and Technology2238-78542025-01-013428362845Improved magnetostriction of Tb-Dy-Fe/Dy–Cu multilayer films by introducing interfacial stress due to the semi coherent interfaceYuze Zhao0Jiheng Li1Xiaoqian Bao2Xuexu Gao3State Key Laboratoy for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, People's Republic of ChinaCorresponding author. State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 30 Xueyuan Rd., Beijing, 100083, People's Republic of China.; State Key Laboratoy for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, People's Republic of ChinaState Key Laboratoy for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, People's Republic of ChinaState Key Laboratoy for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, People's Republic of ChinaMagnetostrictive thin films are commonly applied in micro-electro-mechanical system (MEMS). Tb-Dy-Fe thin films have large magnetostrictive strain and high response frequency, which can efficiently realize the conversion of mechanical energy and electromagnetic energy, and are very suitable for application in MEMS. In this work, magnetostrictive Tb0.3Dy0.7Fe2 single-layer films and Tb0.3Dy0.7Fe2/Dy0.5Cu0.5 multilayers were prepared by direct-current (DC) magnetron sputtering. The effects of microstructure and interface stress on magnetic properties were investigated. The microstructure of as-deposited multilayer films showed clearly the high degree of layer periodicity. After the heat treatment of 475 °C for 1 h, the layers of Tb0.3Dy0.7Fe2 and Dy0.5Cu0.5 have undergone crystallization. The semi-coherent interface was obtained between Tb-Dy-Fe layer and Dy–Cu layer in multilayer films, resulting in the compressive stress in the magnetic Tb-Dy-Fe layers. Magnetically, the coercivity Hc of multilayer films increased obviously compared that of single layer film, and further increased with the number of layers in a multilayer film. The change of coercivity may be attributed to the stress state of films. Compared with the 642 ppm of Tb0.3Dy0.7Fe2 single layer film under the magnetic field of 4000 Oe, the magnetostrictive strain of the [Tb0.3Dy0.7Fe2(50 nm)/Dy0.5Cu0.5(50 nm)]10 multilayer film reached 835 ppm under the same magnetic field. The increase of magnetostrictive strain in Tb0.3Dy0.7Fe2/Dy0.5Cu0.5 multilayer films was attributed to the interface compressive stress to the Tb-Dy-Fe layer through the Dy–Cu layer. The analysis of stress and strain distribution at the interface showed that Dy–Cu phase produced a maximum tensile strain of 3.8 %, and Tb-Dy-Fe phase correspondingly subjected to a significant compressive stress. By tailoring the anisotropy and magnetic domain structure through internal interface stress, it is expected to become an effective way to control the magnetic properties of magnetic thin films.http://www.sciencedirect.com/science/article/pii/S2238785424030710Tb-Dy-Fe alloyMultilayer filmMagnetostrictionInterfacial stress
spellingShingle Yuze Zhao
Jiheng Li
Xiaoqian Bao
Xuexu Gao
Improved magnetostriction of Tb-Dy-Fe/Dy–Cu multilayer films by introducing interfacial stress due to the semi coherent interface
Journal of Materials Research and Technology
Tb-Dy-Fe alloy
Multilayer film
Magnetostriction
Interfacial stress
title Improved magnetostriction of Tb-Dy-Fe/Dy–Cu multilayer films by introducing interfacial stress due to the semi coherent interface
title_full Improved magnetostriction of Tb-Dy-Fe/Dy–Cu multilayer films by introducing interfacial stress due to the semi coherent interface
title_fullStr Improved magnetostriction of Tb-Dy-Fe/Dy–Cu multilayer films by introducing interfacial stress due to the semi coherent interface
title_full_unstemmed Improved magnetostriction of Tb-Dy-Fe/Dy–Cu multilayer films by introducing interfacial stress due to the semi coherent interface
title_short Improved magnetostriction of Tb-Dy-Fe/Dy–Cu multilayer films by introducing interfacial stress due to the semi coherent interface
title_sort improved magnetostriction of tb dy fe dy cu multilayer films by introducing interfacial stress due to the semi coherent interface
topic Tb-Dy-Fe alloy
Multilayer film
Magnetostriction
Interfacial stress
url http://www.sciencedirect.com/science/article/pii/S2238785424030710
work_keys_str_mv AT yuzezhao improvedmagnetostrictionoftbdyfedycumultilayerfilmsbyintroducinginterfacialstressduetothesemicoherentinterface
AT jihengli improvedmagnetostrictionoftbdyfedycumultilayerfilmsbyintroducinginterfacialstressduetothesemicoherentinterface
AT xiaoqianbao improvedmagnetostrictionoftbdyfedycumultilayerfilmsbyintroducinginterfacialstressduetothesemicoherentinterface
AT xuexugao improvedmagnetostrictionoftbdyfedycumultilayerfilmsbyintroducinginterfacialstressduetothesemicoherentinterface