On Topological Analysis of Entropy Measures for Silicon Carbides Networks
The silicon material has provoked and stimulated significant research concern to a considerable extent taking into account its marvelous mechanical, optical, and electronic properties. Naturally, silicons are semiconductors and are utilized in the formation of various materials. For example, it is u...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2021-01-01
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| Series: | Complexity |
| Online Access: | http://dx.doi.org/10.1155/2021/4178503 |
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| _version_ | 1832547096419368960 |
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| author | Xing-Long Wang Muhammad Kamran Siddiqui Syed Ajaz K. Kirmani Shazia Manzoor Sarfraz Ahmad Mlamuli Dhlamini |
| author_facet | Xing-Long Wang Muhammad Kamran Siddiqui Syed Ajaz K. Kirmani Shazia Manzoor Sarfraz Ahmad Mlamuli Dhlamini |
| author_sort | Xing-Long Wang |
| collection | DOAJ |
| description | The silicon material has provoked and stimulated significant research concern to a considerable extent taking into account its marvelous mechanical, optical, and electronic properties. Naturally, silicons are semiconductors and are utilized in the formation of various materials. For example, it is used in assembling the electronic based gadgets. In this article, we have studied the 2D structure of silicon carbide Si2C3−Im,n and Si2C3−IIm,n and then continued to discuss some degree grounded topological descriptors in association with their corresponding entropy measures. We extend this computation to the quantitative and pictorial comparisons which could be beneficial in the structure amendment for effective implementation. |
| format | Article |
| id | doaj-art-932e043c12964bc6aa024b7e659651e8 |
| institution | Kabale University |
| issn | 1099-0526 |
| language | English |
| publishDate | 2021-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Complexity |
| spelling | doaj-art-932e043c12964bc6aa024b7e659651e82025-02-03T06:46:08ZengWileyComplexity1099-05262021-01-01202110.1155/2021/4178503On Topological Analysis of Entropy Measures for Silicon Carbides NetworksXing-Long Wang0Muhammad Kamran Siddiqui1Syed Ajaz K. Kirmani2Shazia Manzoor3Sarfraz Ahmad4Mlamuli Dhlamini5Department of General EducationDepartment of MathematicsDepartment of Electrical EngineeringDepartment of MathematicsDepartment of MathematicsDepartment of Applied MathematicsThe silicon material has provoked and stimulated significant research concern to a considerable extent taking into account its marvelous mechanical, optical, and electronic properties. Naturally, silicons are semiconductors and are utilized in the formation of various materials. For example, it is used in assembling the electronic based gadgets. In this article, we have studied the 2D structure of silicon carbide Si2C3−Im,n and Si2C3−IIm,n and then continued to discuss some degree grounded topological descriptors in association with their corresponding entropy measures. We extend this computation to the quantitative and pictorial comparisons which could be beneficial in the structure amendment for effective implementation.http://dx.doi.org/10.1155/2021/4178503 |
| spellingShingle | Xing-Long Wang Muhammad Kamran Siddiqui Syed Ajaz K. Kirmani Shazia Manzoor Sarfraz Ahmad Mlamuli Dhlamini On Topological Analysis of Entropy Measures for Silicon Carbides Networks Complexity |
| title | On Topological Analysis of Entropy Measures for Silicon Carbides Networks |
| title_full | On Topological Analysis of Entropy Measures for Silicon Carbides Networks |
| title_fullStr | On Topological Analysis of Entropy Measures for Silicon Carbides Networks |
| title_full_unstemmed | On Topological Analysis of Entropy Measures for Silicon Carbides Networks |
| title_short | On Topological Analysis of Entropy Measures for Silicon Carbides Networks |
| title_sort | on topological analysis of entropy measures for silicon carbides networks |
| url | http://dx.doi.org/10.1155/2021/4178503 |
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