Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
Abstract Using our recently developed radical-enhanced metalorganic chemical vapor deposition (REMOCVD) technique, we have grown gallium nitride (GaN) on bulk GaN and GaN on Si templates. Three features make up this system: (1) applying very high-frequency power (60 MHz) to increase the plasma densi...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-05-01
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| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-024-61501-9 |
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