APA (7th ed.) Citation

Dhasiyan, A. K., Amalraj, F. W., Jayaprasad, S., Shimizu, N., Oda, O., Ishikawa, K., & Hori, M. Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition. Nature Portfolio.

Chicago Style (17th ed.) Citation

Dhasiyan, Arun Kumar, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, and Masaru Hori. Epitaxial Growth of High-quality GaN with a High Growth Rate at Low Temperatures by Radical-enhanced Metalorganic Chemical Vapor Deposition. Nature Portfolio.

MLA (9th ed.) Citation

Dhasiyan, Arun Kumar, et al. Epitaxial Growth of High-quality GaN with a High Growth Rate at Low Temperatures by Radical-enhanced Metalorganic Chemical Vapor Deposition. Nature Portfolio.