Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical Stress

Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical Stress

Abstract Quantum dot light‐emitting diodes (QLEDs) have emerged as promising candidates for next‐generation display technology, but the limited lifetime of QLEDs hampers their further commercialization. Despite extensive research that has been conducted for the last decades, the mechanism leading to...

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Bibliographic Details
Main Authors: Jiangxia Huang, Wenxin Lin, Shuxin Li, Jiahao Li, Haonan Feng, Xiongfeng Lin, Yulin Guo, Wenlin Liang, Longjia Wu, Paul W. M. Blom, Quan Niu, Yuguang Ma
Format: Article
Language:English
Published: Wiley-VCH 2025-03-01
Series:Advanced Electronic Materials
Subjects:
blue quantum dot light‐emitting diodes
degradation
hole traps
quantum dots
stability
Online Access:https://doi.org/10.1002/aelm.202400231
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https://doi.org/10.1002/aelm.202400231

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