Effect of Al~2~O~3~ Passivation on Structured Si/PEDOT:PSS Hybrid Solar Cell

Recently, silicon/organic heterojunction solar cells (HSCs) attain great attention because of its attractive characteristics such as rationally high efficiency, low cost, and simple device fabrication technique. However, inferior junction conformity between structured Si and PEDOT: PSS still remains...

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Main Authors: Sameer Alghanmi, Khalid Alshammari
Format: Article
Language:English
Published: Yanbu Industrial College 2025-02-01
Series:Yanbu Journal of Engineering and Science
Online Access:https://doi.org/10.53370/001c.127459
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author Sameer Alghanmi
Khalid Alshammari
author_facet Sameer Alghanmi
Khalid Alshammari
author_sort Sameer Alghanmi
collection DOAJ
description Recently, silicon/organic heterojunction solar cells (HSCs) attain great attention because of its attractive characteristics such as rationally high efficiency, low cost, and simple device fabrication technique. However, inferior junction conformity between structured Si and PEDOT: PSS still remains a great challenge. Here, a superior, conformal, and uniform Al~2~O~3~ thin layer is deposited on structured pyramid n-Si wafer to enhance the front junction conformity using atomic layer deposition (ALD) technique. The deposited Al~2~O~3~ thin layer provides better wettability of PEDOT:PSS compared to native oxide, which minimizes pores, and pin-hole density usually occurs in spin-coating process. Additionally, Al~2~O~3~ thin layer acts as an electron-blocking and hole-transporting layer, resulting in an effective charge separation as well as transport, which boosts the power conversion efficiency. The interface-modified device demonstrates a high open-circuit voltage of 0.612 V as well as a fill factor of 70.7%, leading to a stable efficiency of 14.3% for structural n-Si/PEDOT: PSS HSCs.
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spelling doaj-art-8f30957348774bf986166bf6a31230f22025-02-04T14:56:50ZengYanbu Industrial CollegeYanbu Journal of Engineering and Science1658-53212025-02-01Effect of Al~2~O~3~ Passivation on Structured Si/PEDOT:PSS Hybrid Solar CellSameer AlghanmiKhalid AlshammariRecently, silicon/organic heterojunction solar cells (HSCs) attain great attention because of its attractive characteristics such as rationally high efficiency, low cost, and simple device fabrication technique. However, inferior junction conformity between structured Si and PEDOT: PSS still remains a great challenge. Here, a superior, conformal, and uniform Al~2~O~3~ thin layer is deposited on structured pyramid n-Si wafer to enhance the front junction conformity using atomic layer deposition (ALD) technique. The deposited Al~2~O~3~ thin layer provides better wettability of PEDOT:PSS compared to native oxide, which minimizes pores, and pin-hole density usually occurs in spin-coating process. Additionally, Al~2~O~3~ thin layer acts as an electron-blocking and hole-transporting layer, resulting in an effective charge separation as well as transport, which boosts the power conversion efficiency. The interface-modified device demonstrates a high open-circuit voltage of 0.612 V as well as a fill factor of 70.7%, leading to a stable efficiency of 14.3% for structural n-Si/PEDOT: PSS HSCs.https://doi.org/10.53370/001c.127459
spellingShingle Sameer Alghanmi
Khalid Alshammari
Effect of Al~2~O~3~ Passivation on Structured Si/PEDOT:PSS Hybrid Solar Cell
Yanbu Journal of Engineering and Science
title Effect of Al~2~O~3~ Passivation on Structured Si/PEDOT:PSS Hybrid Solar Cell
title_full Effect of Al~2~O~3~ Passivation on Structured Si/PEDOT:PSS Hybrid Solar Cell
title_fullStr Effect of Al~2~O~3~ Passivation on Structured Si/PEDOT:PSS Hybrid Solar Cell
title_full_unstemmed Effect of Al~2~O~3~ Passivation on Structured Si/PEDOT:PSS Hybrid Solar Cell
title_short Effect of Al~2~O~3~ Passivation on Structured Si/PEDOT:PSS Hybrid Solar Cell
title_sort effect of al 2 o 3 passivation on structured si pedot pss hybrid solar cell
url https://doi.org/10.53370/001c.127459
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