Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density
Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density output relative to a-IGZO source-gated transistor...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Electronic Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-3978/6/1/2 |
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| Summary: | Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density output relative to a-IGZO source-gated transistors (SGTs). Device performances are analyzed using technology computer-aided design (TCAD) simulations. The TCAD simulation results reveal that, with an optimized device structure, the current density of the wrapping a-IGZO transistor can reach 7.34 μA/μm, representing an approximate two-fold enhancement compared to that of the a-IGZO SGT. Furthermore, the optimized wrapping a-IGZO transistor exhibits clear flat saturation and pinch-off behavior. The proposed wrapping a-IGZO transistors show significant potential for applications in large-area electronics. |
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| ISSN: | 2673-3978 |