Single‐ended 2 ch. × 3.4 Gbit/s dual‐mode near‐ground transmitter IO driver in 45 nm CMOS process

A smart dual‐mode IO driver and termination scheme is proposed and power is efficiently consumed for both low‐speed data transmission under 500 Mbit/s and high‐speed data transmission up to 3.4 Gbit/s. During high speed data transmission, the driver uses near‐ground signalling and pre‐emphasis weigh...

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Main Authors: E. Kim, T. Oh
Format: Article
Language:English
Published: Wiley 2017-03-01
Series:Electronics Letters
Subjects:
Online Access:https://doi.org/10.1049/el.2016.4290
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author E. Kim
T. Oh
author_facet E. Kim
T. Oh
author_sort E. Kim
collection DOAJ
description A smart dual‐mode IO driver and termination scheme is proposed and power is efficiently consumed for both low‐speed data transmission under 500 Mbit/s and high‐speed data transmission up to 3.4 Gbit/s. During high speed data transmission, the driver uses near‐ground signalling and pre‐emphasis weight can be controlled for inter symbol interference (ISI) mitigation. The measured eye shows 17.8% vertically and 19.5% horizontally with finite impulse response (FIR) tap control for 15.75″ FR4 channel. The proto‐type 2 channel single‐ended driver has been implemented in 45 nm CMOS process and occupies 0.022 mm2 chip area.
format Article
id doaj-art-8b4216462ad14425a8e4a84c629bd852
institution Kabale University
issn 0013-5194
1350-911X
language English
publishDate 2017-03-01
publisher Wiley
record_format Article
series Electronics Letters
spelling doaj-art-8b4216462ad14425a8e4a84c629bd8522025-02-05T12:30:42ZengWileyElectronics Letters0013-51941350-911X2017-03-0153530831010.1049/el.2016.4290Single‐ended 2 ch. × 3.4 Gbit/s dual‐mode near‐ground transmitter IO driver in 45 nm CMOS processE. Kim0T. Oh1Department of Electronic EngineeringKwangwoon University615, Bima build., 20, Gwangun‐roNowon‐guSeoul139Republic of KoreaDepartment of Electronic EngineeringKwangwoon University615, Bima build., 20, Gwangun‐roNowon‐guSeoul139Republic of KoreaA smart dual‐mode IO driver and termination scheme is proposed and power is efficiently consumed for both low‐speed data transmission under 500 Mbit/s and high‐speed data transmission up to 3.4 Gbit/s. During high speed data transmission, the driver uses near‐ground signalling and pre‐emphasis weight can be controlled for inter symbol interference (ISI) mitigation. The measured eye shows 17.8% vertically and 19.5% horizontally with finite impulse response (FIR) tap control for 15.75″ FR4 channel. The proto‐type 2 channel single‐ended driver has been implemented in 45 nm CMOS process and occupies 0.022 mm2 chip area.https://doi.org/10.1049/el.2016.4290single‐ended dual‐mode near‐ground transmitter IO driverCMOS processsmart dual‐mode IO drivertermination schemelow‐speed data transmissionhigh‐speed data transmission
spellingShingle E. Kim
T. Oh
Single‐ended 2 ch. × 3.4 Gbit/s dual‐mode near‐ground transmitter IO driver in 45 nm CMOS process
Electronics Letters
single‐ended dual‐mode near‐ground transmitter IO driver
CMOS process
smart dual‐mode IO driver
termination scheme
low‐speed data transmission
high‐speed data transmission
title Single‐ended 2 ch. × 3.4 Gbit/s dual‐mode near‐ground transmitter IO driver in 45 nm CMOS process
title_full Single‐ended 2 ch. × 3.4 Gbit/s dual‐mode near‐ground transmitter IO driver in 45 nm CMOS process
title_fullStr Single‐ended 2 ch. × 3.4 Gbit/s dual‐mode near‐ground transmitter IO driver in 45 nm CMOS process
title_full_unstemmed Single‐ended 2 ch. × 3.4 Gbit/s dual‐mode near‐ground transmitter IO driver in 45 nm CMOS process
title_short Single‐ended 2 ch. × 3.4 Gbit/s dual‐mode near‐ground transmitter IO driver in 45 nm CMOS process
title_sort single ended 2 ch 3 4 gbit s dual mode near ground transmitter io driver in 45 nm cmos process
topic single‐ended dual‐mode near‐ground transmitter IO driver
CMOS process
smart dual‐mode IO driver
termination scheme
low‐speed data transmission
high‐speed data transmission
url https://doi.org/10.1049/el.2016.4290
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AT toh singleended2ch34gbitsdualmodeneargroundtransmitteriodriverin45nmcmosprocess