Macroporous layers formation on n-Si substrates in an HF-containing electrolyte adding HCl
Adding an oxidizing agent to a solution of hydrofluoric acid significantly changes the process of electrochemical etching, because allows to accelerate the dissolution of electron silicon. In this work, we studied the formation process and morphology of macropores in high-resistance n-Si dependi...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-06-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/3%20(171)/65-69%20%D0%91%D0%BE%D0%BB%D0%BE%D1%82%D0%BE%D0%B2%20%D0%92.%20%D0%92.,%20%D0%98%D0%B2%D0%BB%D0%B5%D0%B2%20%D0%9A.%20%D0%95.,%20%D0%9F%D0%BE%D0%BD%D0%BE%D0%BC%D0%B0%D1%80%D0%B5%D0%B2%D0%B0%20%D0%98.%20%D0%92..pdf |
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| Summary: | Adding an oxidizing agent to a solution of hydrofluoric acid
significantly changes the process of electrochemical etching,
because allows to accelerate the dissolution of electron silicon.
In this work, we studied the formation process and morphology
of macropores in high-resistance n-Si depending on the
concentration of HCl in the HF: C2
H5
OH electrolyte. It is shown
that the presence of HCl leads to a more uniform pore diameter
distribution both at the surface and in the layer depth, and the
increase in etching rate. With an increase in HCl concentration,
a narrower pore diameter distribution is observed; the main pores
near the surface approximate in size to the pores in the depth of
the porous layer.
The results are explained by the action of HCl as an oxidant. |
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| ISSN: | 1813-8225 2541-7541 |