AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer

AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer

The AlGaN/GaN Schottky barrier diodes (SBDs) working as high-power mixer and multiplier show great potential in millimeter wave (MMW) field owing to their high breakdown voltage. Nevertheless, its further application is severely limited by large reverse leakage current (Jr) since the two-dimensional...

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Bibliographic Details
Main Authors:	Honghui Liu, Zhiwen Liang, Chaokun Yan, Yuebo Liu, Fengge Wang, Yanyan Xu, Junyu Shen, Zhengwen Xiao, Zhisheng Wu, Yang Liu, Qi Wang, Xinqiang Wang, Baijun Zhang
Format:	Article
Language:	English
Published:	Wiley 2022-01-01
Series:	Advances in Condensed Matter Physics
Online Access:	http://dx.doi.org/10.1155/2022/5885992
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