Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption

Mathematical models for the Shubnikov-de Haas oscillations in semiconductors are obtained at the microwave-radiation absorption and its temperature dependence. Three-dimensional image of microwave magnetoabsorption oscillations in narrow-gap semiconductors is established. Using a mathematical model,...

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Main Authors: G. Gulyamov, U. I. Erkaboev, A. G. Gulyamov
Format: Article
Language:English
Published: Wiley 2019-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2019/3084631
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author G. Gulyamov
U. I. Erkaboev
A. G. Gulyamov
author_facet G. Gulyamov
U. I. Erkaboev
A. G. Gulyamov
author_sort G. Gulyamov
collection DOAJ
description Mathematical models for the Shubnikov-de Haas oscillations in semiconductors are obtained at the microwave-radiation absorption and its temperature dependence. Three-dimensional image of microwave magnetoabsorption oscillations in narrow-gap semiconductors is established. Using a mathematical model, the oscillations of the microwave magnetoabsorption are considered for different values of the electromagnetic field. The results of calculations are compared with experimental data. The proposed model explains the experimental results in HgSe at different temperatures.
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institution Kabale University
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series Advances in Condensed Matter Physics
spelling doaj-art-88d42a4b31f84caaab42d101ecb9cf8b2025-02-03T06:07:21ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242019-01-01201910.1155/2019/30846313084631Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation AbsorptionG. Gulyamov0U. I. Erkaboev1A. G. Gulyamov2Namangan Engineering-Technology Institute, 160115 Namangan, UzbekistanNamangan Engineering-Technology Institute, 160115 Namangan, UzbekistanPhysico-technical Institute, NGO “Physics-Sun”, Academy of Sciences of Uzbekistan, 100084 Tashkent, UzbekistanMathematical models for the Shubnikov-de Haas oscillations in semiconductors are obtained at the microwave-radiation absorption and its temperature dependence. Three-dimensional image of microwave magnetoabsorption oscillations in narrow-gap semiconductors is established. Using a mathematical model, the oscillations of the microwave magnetoabsorption are considered for different values of the electromagnetic field. The results of calculations are compared with experimental data. The proposed model explains the experimental results in HgSe at different temperatures.http://dx.doi.org/10.1155/2019/3084631
spellingShingle G. Gulyamov
U. I. Erkaboev
A. G. Gulyamov
Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption
Advances in Condensed Matter Physics
title Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption
title_full Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption
title_fullStr Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption
title_full_unstemmed Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption
title_short Shubnikov–de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption
title_sort shubnikov de haas oscillations in semiconductors at the microwave radiation absorption
url http://dx.doi.org/10.1155/2019/3084631
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AT uierkaboev shubnikovdehaasoscillationsinsemiconductorsatthemicrowaveradiationabsorption
AT aggulyamov shubnikovdehaasoscillationsinsemiconductorsatthemicrowaveradiationabsorption