Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures
Electronic and optical properties of type-II InGaN/GaNSb/GaN quantum-well (QW) structures are investigated by using the multiband effective mass theory for potential applications in red light-emitting diodes. The heavy-hole effective mass around the topmost valence band is not affected much by the i...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2022/8993349 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832548829569744896 |
|---|---|
| author | Seoung-Hwan Park Jong-In Shim Dong-Soo Shin |
| author_facet | Seoung-Hwan Park Jong-In Shim Dong-Soo Shin |
| author_sort | Seoung-Hwan Park |
| collection | DOAJ |
| description | Electronic and optical properties of type-II InGaN/GaNSb/GaN quantum-well (QW) structures are investigated by using the multiband effective mass theory for potential applications in red light-emitting diodes. The heavy-hole effective mass around the topmost valence band is not affected much by the insertion of the GaNSb layer, and the optical matrix elements are greatly increased by the inclusion of the GaNSb layer in the InGaN/GaN QW structure. As a result, the type-II InGaN/GaNSb/GaN QW structure shows a much larger emission peak than the conventional type-I QW structure owing to the decrease in spatial separation between electron and hole wavefunctions, in addition to the reduction of the effective well width. It is also observed that the In content in InGaN well can be significantly reduced for the type-II QW structure with a large Sb content, compared to that for the type-I QW structure. |
| format | Article |
| id | doaj-art-87f0a14b77a64d5a8fda6493d00356bf |
| institution | Kabale University |
| issn | 1687-8124 |
| language | English |
| publishDate | 2022-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-87f0a14b77a64d5a8fda6493d00356bf2025-02-03T06:13:00ZengWileyAdvances in Condensed Matter Physics1687-81242022-01-01202210.1155/2022/8993349Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well StructuresSeoung-Hwan Park0Jong-In Shim1Dong-Soo Shin2Department of Electronics EngineeringDepartment of Photonics and Nanoelectronics and BK21 FOUR ERICA-ACE CenterDepartment of Photonics and Nanoelectronics and BK21 FOUR ERICA-ACE CenterElectronic and optical properties of type-II InGaN/GaNSb/GaN quantum-well (QW) structures are investigated by using the multiband effective mass theory for potential applications in red light-emitting diodes. The heavy-hole effective mass around the topmost valence band is not affected much by the insertion of the GaNSb layer, and the optical matrix elements are greatly increased by the inclusion of the GaNSb layer in the InGaN/GaN QW structure. As a result, the type-II InGaN/GaNSb/GaN QW structure shows a much larger emission peak than the conventional type-I QW structure owing to the decrease in spatial separation between electron and hole wavefunctions, in addition to the reduction of the effective well width. It is also observed that the In content in InGaN well can be significantly reduced for the type-II QW structure with a large Sb content, compared to that for the type-I QW structure.http://dx.doi.org/10.1155/2022/8993349 |
| spellingShingle | Seoung-Hwan Park Jong-In Shim Dong-Soo Shin Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures Advances in Condensed Matter Physics |
| title | Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures |
| title_full | Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures |
| title_fullStr | Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures |
| title_full_unstemmed | Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures |
| title_short | Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures |
| title_sort | enhanced light emission from type ii red ingan gansb gan quantum well structures |
| url | http://dx.doi.org/10.1155/2022/8993349 |
| work_keys_str_mv | AT seounghwanpark enhancedlightemissionfromtypeiiredingangansbganquantumwellstructures AT jonginshim enhancedlightemissionfromtypeiiredingangansbganquantumwellstructures AT dongsooshin enhancedlightemissionfromtypeiiredingangansbganquantumwellstructures |