Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation
Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon subs...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2017-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2017/4276506 |
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| _version_ | 1832561716380041216 |
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| author | Swati Arora Vivek Jaimini Subodh Srivastava Y. K. Vijay |
| author_facet | Swati Arora Vivek Jaimini Subodh Srivastava Y. K. Vijay |
| author_sort | Swati Arora |
| collection | DOAJ |
| description | Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth. |
| format | Article |
| id | doaj-art-87ee7dc011a044d790c0df59df259eaa |
| institution | Kabale University |
| issn | 1687-9503 1687-9511 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Nanotechnology |
| spelling | doaj-art-87ee7dc011a044d790c0df59df259eaa2025-02-03T01:24:27ZengWileyJournal of Nanotechnology1687-95031687-95112017-01-01201710.1155/2017/42765064276506Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal EvaporationSwati Arora0Vivek Jaimini1Subodh Srivastava2Y. K. Vijay3Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, IndiaSwami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, IndiaVivekananda Global University, Jaipur, IndiaVivekananda Global University, Jaipur, IndiaBismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.http://dx.doi.org/10.1155/2017/4276506 |
| spellingShingle | Swati Arora Vivek Jaimini Subodh Srivastava Y. K. Vijay Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation Journal of Nanotechnology |
| title | Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation |
| title_full | Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation |
| title_fullStr | Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation |
| title_full_unstemmed | Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation |
| title_short | Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation |
| title_sort | properties of nanostructure bismuth telluride thin films using thermal evaporation |
| url | http://dx.doi.org/10.1155/2017/4276506 |
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