Sub-Nanosecond Greater-Than-10-V Compact Tunable Pulse Generator for Low-Duty-Cycle High-Peak-Power Ultra-Wideband Applications
An ultra-wideband pulse generator was designed and fabricated in GaAs HBT IC technology. The generator includes delay and differential circuits to convert a TTL input into a Gaussian pulse signal as well as a Class-C amplifier to boost the pulse amplitude while compressing the pulse width. By adjust...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2011-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2011/871474 |
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| Summary: | An ultra-wideband pulse generator was designed and fabricated in GaAs HBT IC technology. The generator includes delay and differential circuits to convert a TTL input into a Gaussian pulse signal as well as a Class-C amplifier to boost the pulse amplitude while compressing the pulse width. By adjusting the collector bias of the Class-C amplifier, the pulse amplitude can be varied linearly between 3.5 V and 11.5 V while maintaining the pulse width at 0.3 ± 0.1 nanosecond. Alternatively, by adjusting the base bias of the Class-C amplifier, the pulse width can be varied linearly between 0.25 ns and 0.65 ns while maintaining the pulse amplitude at 10 ± 1 V. Finally, the amplified Gaussian signal can be shaped into a monocycle signal by an L-C derivative circuit. The present pulse generator compares favorably with pulse generators fabricated in CMOS ICs, step-recovery diodes, or other discrete devices. |
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| ISSN: | 0882-7516 1563-5031 |