Optimization of CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for High-Voltage Power Electronics

Optimization of CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diodes for High-Voltage Power Electronics

This study optimizes the CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes (HJDs) by tailoring the structural parameters of CuO<sub>x</sub> layers. The hole concentration in the sputtered CuO<sub>x</sub> was precisely contro...

Full description

Saved in:

Bibliographic Details
Main Authors:	Xiaohui Wang, Mujun Li, Minghao He, Honghao Lu, Chun-Zhang Chen, Yang Jiang, Kangyao Wen, Fangzhou Du, Yi Zhang, Chenkai Deng, Zilong Xiong, Haozhe Yu, Qing Wang, Hongyu Yu
Format:	Article
Language:	English
Published:	MDPI AG 2025-01-01
Series:	Nanomaterials
Subjects:	power electronics β-Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes Cu<sub>2</sub>O optimization
Online Access:	https://www.mdpi.com/2079-4991/15/2/87
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	This study optimizes the CuO<sub>x</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes (HJDs) by tailoring the structural parameters of CuO<sub>x</sub> layers. The hole concentration in the sputtered CuO<sub>x</sub> was precisely controlled by adjusting the Ar/O<sub>2</sub> gas ratio. Experimental investigations and TCAD simulations were employed to systematically evaluate the impact of the CuO<sub>x</sub> layer dimension and hole concentration on the electrical performance of HJDs. The results indicate that increasing the diameter dimension of the CuO<sub>x</sub> layer or tuning the hole concentration to optimal values significantly enhances the breakdown voltage (V<sub>B</sub>) of single-layer HJDs by mitigating the electric field crowing effects. Additionally, a double-layer CuO<sub>x</sub> structure (p<sup>+</sup> CuO<sub>x</sub>/p<sup>−</sup> CuO<sub>x</sub>) was designed and optimized to achieve an ideal balance between the V<sub>B</sub> and specific on-resistance (R<sub>on,sp</sub>). This double-layer HJD demonstrated a high V<sub>B</sub> of 2780 V and a low R<sub>on,sp</sub> of 6.46 mΩ·cm<sup>2</sup>, further yielding a power figure of merit of 1.2 GW/cm<sup>2</sup>. These findings present a promising strategy for advancing the performance of Ga<sub>2</sub>O<sub>3</sub> devices in power electronics applications.
ISSN:	2079-4991