Role of doping in probe microscopies for the Si(111) 7×7 surface
We investigate a scanning probe microscopy image flickering phenomenon, i.e., distinct changes in intensity with the tip height, observed on a B-doped Si(111) 7×7 reconstructed surface. The phenomenon is exclusively observed in heavily doped systems owing to large variations in the adatom heights (∼...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2025-02-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.7.L012046 |
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| Summary: | We investigate a scanning probe microscopy image flickering phenomenon, i.e., distinct changes in intensity with the tip height, observed on a B-doped Si(111) 7×7 reconstructed surface. The phenomenon is exclusively observed in heavily doped systems owing to large variations in the adatom heights (∼0.5 a.u.) and the existence of bistable subunits upon doping as the probe tip approaches the surface. We find that B atoms prefer to reside in the surface layer, which is ∼1.1 eV more stable compared to interior layers. These dopant atoms exert a substantial influence on the structural integrity and electronic structure of the lattice. |
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| ISSN: | 2643-1564 |