Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells
It is well known that nitride-based devices suffer the polarization effects. A promising way to overcome the polarization effects is growth in a direction perpendicular to the c-axis (nonpolar direction). Nonpolar devices do not suffer polarization charge, and then they have a chance to achieve the...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
|
| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/910256 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832554644285423616 |
|---|---|
| author | Ming-Jer Jeng |
| author_facet | Ming-Jer Jeng |
| author_sort | Ming-Jer Jeng |
| collection | DOAJ |
| description | It is well known that nitride-based devices suffer the polarization effects. A promising way to overcome the polarization effects is growth in a direction perpendicular to the c-axis (nonpolar direction). Nonpolar devices do not suffer polarization charge, and then they have a chance to achieve the high solar efficiency. The understanding of the solar performance of non-polar InGaN-based solar cells will be interesting. For a pin non-polar solar cell with GaN p- and n-cladding layers, the conduction band offset (or barrier height, ) between an intrinsic layer and n-GaN layer is an important issue correlating to the efficiency and fill factor. The efficiency and fill factor will be seriously degraded due to sufficiently high barrier height. To reduce a high barrier height, some graded layers with an energy bandgap between the energy bandgap of n-GaN and InxGa1−xN intrinsic layer can be inserted to the interface of n-GaN and InxGa1-xN layers. From simulation, it indicates that the insertion of graded layer is an effective method to lower energy barrier when there exists a high energy band offset in non-polar nitride devices. |
| format | Article |
| id | doaj-art-8572effac9b44542966d68b51dc599f2 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-8572effac9b44542966d68b51dc599f22025-02-03T05:50:58ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/910256910256Simulation of Nonpolar p-GaN/i-N/n-GaN Solar CellsMing-Jer Jeng0Department of Electronic Engineering and Green Technology Research Center, Chang-Gung University, 259 WenHwa 1st Road, Kweishan, Taoyuan 333, TaiwanIt is well known that nitride-based devices suffer the polarization effects. A promising way to overcome the polarization effects is growth in a direction perpendicular to the c-axis (nonpolar direction). Nonpolar devices do not suffer polarization charge, and then they have a chance to achieve the high solar efficiency. The understanding of the solar performance of non-polar InGaN-based solar cells will be interesting. For a pin non-polar solar cell with GaN p- and n-cladding layers, the conduction band offset (or barrier height, ) between an intrinsic layer and n-GaN layer is an important issue correlating to the efficiency and fill factor. The efficiency and fill factor will be seriously degraded due to sufficiently high barrier height. To reduce a high barrier height, some graded layers with an energy bandgap between the energy bandgap of n-GaN and InxGa1−xN intrinsic layer can be inserted to the interface of n-GaN and InxGa1-xN layers. From simulation, it indicates that the insertion of graded layer is an effective method to lower energy barrier when there exists a high energy band offset in non-polar nitride devices.http://dx.doi.org/10.1155/2012/910256 |
| spellingShingle | Ming-Jer Jeng Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells International Journal of Photoenergy |
| title | Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells |
| title_full | Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells |
| title_fullStr | Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells |
| title_full_unstemmed | Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells |
| title_short | Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells |
| title_sort | simulation of nonpolar p gan i n n gan solar cells |
| url | http://dx.doi.org/10.1155/2012/910256 |
| work_keys_str_mv | AT mingjerjeng simulationofnonpolarpganinngansolarcells |