Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films
In this paper, the photoluminescence characteristics of solution-processed amorphous ZnO and related compounds of InZnO and GaZnO thin films were comparatively analyzed. Depending on the molarity of the precursor solution, PL emission peaks ranging from 382.4 nm to 384.8 nm were observed for the ZnO...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10695762/ |
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